Features
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Light Weight
Complementary P-Channel Available -
IRHLF7970Z4
ESD Rating: Class 0 per MIL-STD-750,
Method 1020
IRHLF770Z4 is part of the International Rectifier HiRel
family of products. IR HiRel R7 Logic Level Power
MOSFETs provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space and
other radiation environments. The threshold voltage
remains within acceptable operating limits over the full
operating temperature and post radiation. This is achieved
while maintaining single event gate rupture and single
event burnout immunity.
The device is ideal when used to interface directly with
most logic gates, linear IC’s, micro-controllers, and other
device types that operate from a 3.3-5V source. It may
also be used to increase the output current of a PWM,
voltage comparator or an operational amplifier where the
logic level drive signal is available.
Absolute Maximum Ratings Pre-Irradiation
Symbol Parameter Value Units
I
D
@ V
GS
= 4.5V, T
C
= 25°C Continuous Drain Current
1.6*
A
I
D
@ V
GS
= 4.5V, T
C
= 100°C Continuous Drain Current
1.0*
I
DM
Pulsed Drain Current
6.4
P
D
@T
C
= 25°C Maximum Power Dissipation
5.0 W
Linear Derating Factor
0.04 W/°C
V
GS
Gate-to-Source Voltage
± 10 V
E
AS
Single Pulse Avalanche Energy
6.9
mJ
I
AR
Avalanche Current 1.6
A
E
AR
Repetitive Avalanche Energy
0.5 mJ
dv/dt Peak Diode Recovery dv/dt
3.5 V/ns
T
J
Operating Junction and
-55 to + 150
°C
T
STG
Storage Temperature Range
Lead Temperature
300 (0.063 in. /1.6 mm from case for 10s)
Weight
0.98 (Typical) g
TO-39
IRHLF770Z4
2N7621T2
1 2018-05-30
Product Summary
Part Number Radiation Level RDS(on) I
D
IRHLF770Z4 100 kRads(Si)
0.65
1.6A*
IRHLF730Z4 300 kRads(Si)
0.65
1.6A*
60V, N-CHANNEL
TECHNOLOGY
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE TO-205AF (TO-39)
* Derated to match the complementary P-Channel Logic Level Power Mosfet - IRHLF7970Z4
PD-94695H
Description
For Footnotes, refer to the page 2.
International Rectifier HiRel Products, Inc.
2 2018-05-30
IRHLF770Z4
2N7621T2
Pre-Irradiation
International Rectifier HiRel Products, Inc.
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
R
JC
Junction-to-Case ––– ––– 25
°C/W
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V V
GS
= 0V, I
D
= 250µA
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.08 ––– V/°C Reference to 25°C, I
D
= 1.0mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.65
V
GS
= 4.5V, I
D
= 1.0A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.0 V
V
DS
= V
GS
, I
D
= 250µA
V
GS(th)
/T
J
Gate Threshold Voltage Coefficient ––– -3.5 ––– mV/°C
Gfs
Forward Transconductance 1.1 ––– ––– S V
DS
= 10V, I
D
= 1.0A
I
DSS
Zero Gate Voltage Drain Current
––– ––– 1.0
µA
V
DS
= 48V, V
GS
= 0V
––– ––– 10 V
DS
= 48V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Leakage Forward ––– ––– 100
nA
V
GS
= 10V
Gate-to-Source Leakage Reverse ––– ––– -100 V
GS
= -10V
Q
G
Total Gate Charge ––– ––– 2.6
nC
I
D
= 1.6A
Q
GS
Gate-to-Source Charge ––– ––– 0.8 V
DS
= 30V
Q
GD
Gate-to-Drain (‘Miller’) Charge ––– ––– 1.5
V
GS
= 4.5V
t
d(on)
Turn-On Delay Time ––– ––– 6.5
ns
V
DD
= 30V
tr
Rise Time ––– ––– 14 I
D
= 1.6A
t
d(off)
Turn-Off Delay Time ––– ––– 30
R
G
= 24
t
f
Fall Time ––– ––– 13
V
GS
= 4.5V
Ls +L
D
Total Inductance ––– 7.0 ––– nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm / 0.25
in from package) with Source wire internally
bonded from Source lead to Drain lead.
C
iss
Input Capacitance ––– 152 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 39 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 1.6 ––– ƒ = 1.0MHz
R
G
Gate Resistance ––– 9.5 –––
ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
I
S
Continuous Source Current (Body Diode) ––– ––– 1.6*
A
I
SM
Pulsed Source Current (Body Diode) ––– ––– 6.4
V
SD
Diode Forward Voltage ––– ––– 1.2 V T
J
= 25°C,I
S
= 1.6A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– ––– 78 ns
T
J
= 25°C, I
F
= 1.6A, V
DD
≤25V
Q
rr
Reverse Recovery Charge ––– ––– 150 nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
V
DD
= 25V, starting T
J
= 25°C, L = 5.4mH, Peak I
L
= 1.6A, V
GS
= 10V
I
SD
1.6A, di/dt 92A/µs, V
DD
60V, T
J
150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with V
GS
Bias. 10 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 48 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
* Derated to match the complementary P-Channel Logic Level Power Mosfet - IRHLF7970Z4