2 2018-07-30
IRHLF87Y20
Pre-Irradiation
International Rectifier HiRel Products, Inc.
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
R
JC
Junction-to-Case ––– ––– 8.0
°C/W
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V V
GS
= 0V, I
D
= 250µA
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, I
D
= 250µA
R
DS(on)
––– 27 32
m
V
GS
= 4.5V, I
D2
= 10.2A
––– 26 31
m
V
GS
= 7.0V, I
D2
= 10.2A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.3 V
V
DS
= V
GS
, I
D
= 250µA
V
GS(th)
/T
J
Gate Threshold Voltage Coefficient ––– -4.7 ––– mV/°C
Gfs
Forward Transconductance 20 ––– ––– S
V
DS
= 15V, I
D2
= 10.2A
I
DSS
Zero Gate Voltage Drain Current
––– ––– 1.0
µA
V
DS
= 16V, V
GS
= 0V
––– ––– 10 V
DS
= 16V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Leakage Forward ––– ––– 100
nA
V
GS
= 12V
Gate-to-Source Leakage Reverse ––– ––– -100 V
GS
= -12V
Q
G
Total Gate Charge –��– 20 27
nC
I
D1
= 12A
Q
GS
Gate-to-Source Charge ––– 4.0 5.7
V
DS
= 10V
Q
GD
Gate-to-Drain (‘Miller’) Charge ––– 4.5 8.5
V
GS
= 5.5V
t
d(on)
Turn-On Delay Time ––– 17 21
ns
I
D1
= 12A **
tr
Rise Time ––– 63 114 V
DD
= 10V
t
d(off)
Turn-Off Delay Time ––– 26 30
R
G
= 2.35
t
f
Fall Time ––– 12 22
V
GS
= 5.5V
Ls +L
D
Total Inductance ––– 7.0 ––– nH
Measured from Drain lead (6mm / 0.25in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire inter-
nally bonded from Source pin to Drain pin
C
iss
Input Capacitance ––– 2431 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 592 ––– V
DS
= 20V
C
rss
Reverse Transfer Capacitance ––– 143 –––
ƒ = 1.0MHz
R
G
Gate Resistance ––– 0.94 –––
ƒ = 1.0MHz, open drain
Static Drain-to-Source On-Resistance
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
I
S
Continuous Source Current (Body Diode) ––– ––– 12*
I
SM
Pulsed Source Current (Body Diode) ––– ––– 48
V
SD
Diode Forward Voltage ––– ––– 1.2 V T
J
= 25°C,I
S
= 12A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– ––– 41 ns
T
J
= 25°C, I
F
= 12A, V
DD
≤20V
Q
rr
Reverse Recovery Charge ––– ––– 51 µC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
V
DD
= 20V, starting T
J
= 25°C, L = 0.6mH, Peak I
L
=12A, V
GS
= 12V
I
SD
12A, di/dt 423A/µs, V
DD
20V, T
J
150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with V
GS
Bias. 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 16 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
* Current is limited by package
** Switching speed maximum limits are based on manufacturing test equipment and capability.