Absolute Maximum Ratings Pre-Irradiation
Symbol Parameter Value Units
I
D1
@ V
GS
= 4.5V, T
C
= 25°C Continuous Drain Current
17*
A
I
D2
@ V
GS
= 4.5V, T
C
= 100°C
Continuous Drain Current
17*
I
DM
@ T
C
= 25°C
Pulsed Drain Current
68
P
D
@ T
C
= 25°C Maximum Power Dissipation
36 W
Linear Derating Factor
0.3 W/°C
V
GS
Gate-to-Source Voltage
± 12 V
E
AS
Single Pulse Avalanche Energy
37
mJ
I
AR
Avalanche Current 17
A
E
AR
Repetitive Avalanche Energy
3.6 mJ
dv/dt Peak Diode Recovery dv/dt
3.75 V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Package Mounting Surface Temperature
300 (for 5s)
Weight
0.25 (Typical) g
°C
SMD-0.2
(METAL LID)
IRHLNM87Y20
1 2018-07-30
Product Summary
Part Number Radiation Level RDS(on) I
D
IRHLNM87Y20 100 kRads (Si)
15m
17A*
IRHLNM83Y20 300 kRads (Si)
15m
17A*
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.2)
* Current is limited by package
Description
For Footnotes, refer to the page 2.
Features
5V CMOS and TTL Compatible
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Light Weight
Surface Mount
ESD Rating: Class 1B per MIL-STD-750,
Method 1020
R
8
20V, N-CHANNEL
TECHNOLOGY
PD-97811A
IRHLNM87Y20 is part of the International Rectifier HiRel
family of products. IR HiRel R8 Logic Level Power
MOSFETs provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space and
other radiation environments. The threshold voltage
remains within acceptable operating limits over the full
operating temperature and post radiation. This is achieved
while maintaining single event gate rupture and single
event burnout immunity.
The device is ideal when used to interface directly with
most logic gates, linear IC’s, micro-controllers, and other
device types that operate from a 3.3-5V source. It may
also be used to increase the output current of a PWM,
voltage comparator or an operational amplifier where the
logic level drive signal is available.
International Rectifier HiRel Products, Inc.
2 2018-07-30
IRHLNM87Y20
Pre-Irradiation
International Rectifier HiRel Products, Inc.
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
R
JC
Junction-to-Case ––– ––– 3.5
°C/W
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V V
GS
= 0V, I
D
= 250µA
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, I
D
= 250µA
R
DS(on)
––– 12 15
m
V
GS
= 4.5V, I
D2
= 17A* 
––– 11 14
m
V
GS
= 7.0V, I
D2
= 17A* 
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.3 V
V
DS
= V
GS
, I
D
= 250µA
V
GS(th)
/T
J
Gate Threshold Voltage Coefficient ––– -4.2 ––– mV/°C
Gfs
Forward Transconductance 20 ––– ––– S V
DS
= 15V, I
D2
= 17A
I
DSS
Zero Gate Voltage Drain Current
––– ––– 1.0
µA
V
DS
= 16V, V
GS
= 0V
––– ––– 10 V
DS
= 16V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Leakage Forward ––– ––– 100
nA
V
GS
= 12V
Gate-to-Source Leakage Reverse ––– ––– -100 V
GS
= -12V
Q
G
Total Gate Charge ––– 18 24
nC
I
D1
= 17A
Q
GS
Gate-to-Source Charge ––– 5.0 7.2 V
DS
= 10V
Q
GD
Gate-to-Drain (‘Miller’) Charge ––– 4.0 6.3
V
GS
= 5.5V
t
d(on)
Turn-On Delay Time ––– 18 24
ns
I
D1
= 17A **
tr
Rise Time ––– 73 150 V
DD
= 10V
t
d(off)
Turn-Off Delay Time ––– 24 32
R
G
= 2.35
t
f
Fall Time ––– 10 18
V
GS
= 5.5V
Ls +L
D
Total Inductance ––– 1.0 ––– nH
Measured from center of Drain
pad to center of Source pad
C
iss
Input Capacitance ––– 2336 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 596 ––– V
DS
= 20V
C
rss
Reverse Transfer Capacitance ––– 147 –––
ƒ = 1.0MHz
R
G
Gate Resistance ––– 0.76 –––

ƒ = 1.0MHz, open drain
Static Drain-to-Source On-Resistance
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
I
S
Continuous Source Current (Body Diode) ––– ––– 17*
I
SM
Pulsed Source Current (Body Diode) ––– ––– 68
V
SD
Diode Forward Voltage ––– ––– 1.0 V T
J
= 25°C,I
S
= 17A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– ––– 41 ns
T
J
= 25°C, I
F
= 17A, V
DD
≤20V
Q
rr
Reverse Recovery Charge ––– ––– 33 µC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
V
DD
= 20V, starting T
J
= 25°C, L = 0.26mH, Peak I
L
=17A, V
GS
= 12V
I
SD
17A, di/dt 419A/µs, V
DD
20V, T
J
150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with V
GS
Bias. 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 16 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
* Current is limited by package
** Switching speed maximum limits are based on manufacturing test equipment and capability.