PRELIMINARY
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MSW2T-2735-196/-197
S Band High Power Switch Module - SMT
Features:
Surface Mount S- Band Limiter Module:
o -196: 9mm x 6mm x 2.5mm – clockwise topology
o -197: 9mm x 6mm x 2.5mm – counter clockwise topology
Frequency Range: 2.7 to 3.5 GHz
High Average Power Handling (CW): +57 dBm
High Peak Power Handling: +60 dBm
Low Insertion Loss: 0.4 dB
Return Loss (Ant-Tx): 16 dB
Isolation: 37 dB
RoHS Compliant
Description:
The MSW2T-2735-196/-197 SP2T surface mount High Power PIN Diode switches operates from the S Band
frequency range from 2.7 GHz to 3.5 GHz: The MSW2T-2735-196/-197 high power switch leverages high
reliability hybrid manufacturing processes which yield both superior RF and thermal characteristics performance
when compared to MMIC or Glass Carrier based technologies. The hybrid design approach permits precise PIN
Diode selection to optimize RF performance while maintaining competitive cost targets. The small form factor
(9mm x 6mm x 2.5mm) offers world class power handling, low insertion loss, and superior isolation performance
in a single device. The MSW2T-2735-196/-197 asymmetrical switches are tailored to minimize Transmit to
Antenna loss while maximizing Transmit to Receive isolation. The hybrid assembly has been designed with an
extremely low thermal resistance of 4.3
o
C/W which will reliably permit handling up to 57 dBm CW power and up
to 60 dBm peak RF incident power while operating at the T
amb
(MAX) = +80
o
C.
ESD and Moisture Sensitivity Rating
The MSW2T-2735-196/-197 Switch Module carries a Class 1 ESD rating (HBM) and an MSL 1 moisture rating.
Thermal Management Features
The MSW2T-2735-196/-197 has been design to offer superior long term reliability in the customer’s application
by utilizing ultra-thin Au plating to combat Au embrittlement concerns. Also, a proprietary design methodology
minimizes thermal resistance from the PIN Diode junction to base plate (R
THJ-A
) to the customer’s substrate and
PRELIMINARY MSW2T-2735-196/-197 Rev 1.6
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associated heat sink. This circuit topology coupled with the thermal characteristic of the substrate design
enables reliably handling High Input RF Power up to 57 dBm CW and RF Peak Power levels up to 60dBm with
the base plate temperature at 80
o
C.
MSW2T-2735-196/-197 Switch Module Equivalent Circuit
Absolute Maximum Ratings
@ Zo=50Ω, T
A
= +25
o
C as measured on the base ground surface of the device.
Parameter
Conditions
Absolute Maximum Value
DC Forward Current @ B1
400 mA
DC Reverse Voltage @ B1
50 V
DC Forward Diode Voltage @
B1 or B2
150 mA
1.2 V
Operating Temperature
-54
o
C to 80
o
C
Storage Temperature
-65
o
C to +150
o
C
Junction Temperature
+175
o
C
Assembly Temperature
T = 10 sec
+260
o
C for 10 sec
Peak Incident Power Handling
500 usec pulse width, 20% duty
cycle source and load VSWR =
1.2 : 1 (max); T
case
= 80
o
C
57 dBm
Thermal Resistance from Die
Junction to Ground Plane
Surface on Bottom of Package
4.3
o
C/W
Note 1: T
CASE
is defined as the temperature of the bottom ground surface of the device.