PRELIMINARY
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MSW2T-0025-195
SP2T Surface Mount High Power Series PIN Diode Switch
Features:
Surface Mount SP2T Switch: 5mm x 8mm x 2.5mm
Industry Leading Average Power Handling: 160W CW
L Band Frequency Range: 1 GHz to 2 GHz
Support High RF Peak Power: Handling: 500W
Low Insertion Loss: < 0.4 dB
High IP3: >65 dBm
Operates for Positive Voltage Only: (+5V & +28V to +200V)
RoHS Compliant
Description:
The MSW2T-0025-195 surface mount High Power PIN Diode switch leverages high reliability hybrid
manufacturing processes which yield proven superior performance to both MMIC and Glass Carrier based
technologies. The hybrid design approach permits precise PIN Diode selection to optimize RF performance
while maintaining competitive cost targets. The MSW2T-0025-195 is an asymmetrical SP2T which was
designed to maximize the Tx-Rx Isolation while minimizing the Tx-ANT loss. The MSW2T-0025-195 can safely
handle L Band CW powers of up to 50 dBm and peak power levels up to 57 dBm while being operated at an
ambient temperature of +85
o
C. The small form factor (8mm x 5mm x 2.5mm) offers world class power handling,
low insertion loss, and superior intermodulation performance exceeding all competitive technologies.
Typical Applications:
Radar T/R Modules
Switch Bank Filters
Mil-Com Radios
The MSW2T-0025-195 series of High Power SP2T switches are intended for use in high power, high reliability,
mission critical applications across the 1 GHz to 2.0 GHz Band frequency ranges. The manufacturing process
has been proven through years of extensive use in high reliability applications.
The MSW2T-0025-195 SP2T switches are fully RoHS compliant.
PRELIMINARY MSW2T-0025-195 Rev A
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ESD and Moisture Sensitivity Level Rating:
The MSW2T-0025-195 carries an ESD rating of Class 1C, Human Body Model (HBM) and a moisture sensitivity
rating of MSL 1.
MSW2T-0025-195 Specifications @ Zo = 50Ω; Ta = +25°C
Parameter
Symbol
Unit
Test Conditions
Min
Value
Typical
Value
Max
Value
Frequency
F
GHz
1.0
2.0
Tx-Ant IL
IL
dB
0 V @ 200 mA (Tx)
+28V @ 0 mA (Rx)
0.3
0.4
Ant-Rx IL
IL
dB
0 V @ 100 mA (Rx)
+28V @ 0 mA (Tx)
0.3
0.4
Tx-Ant RL
RL(Tx)
dB
0 V @ 200 mA (Tx)
+28V @ 0 mA (Rx)
18
20
Ant-Rx RL
RL(Rx)
dB
0 V @ 100 mA (Rx)
+28V @ 0 mA (Tx)
18
20
Tx-Rx Isolation
ISO(Rx)
dB
0 V @ 200 mA (Tx)
+28V @ 0 mA (Rx)
15
20
Rx-Tx Isolation
ISO(Tx)
dB
0 V @ 100 mA (Rx)
+28V @ 0 mA (Tx)
13
15
CW Incident
Power, Ant-Tx
Low Loss State
(Note 2)
P
inc
(CW)
dBm
0 V @ 200 mA (Tx)
+28V @ 0 mA (Rx)
1.5:1 source & load
VSWR
50
CW Incident
Power, Ant-Rx
Low Loss State
(Note 2)
P
inc
(CW)
dBm
0 V @ 100 mA (Rx)
+28V @ 0 mA (Tx)
1.5:1 source & load
VSWR
40
Peak Incident
Power Ant-Tx
Low Loss State
P
inc
(PK)
dBm
0 V @ 200 mA (Tx)
+28V @ 0 mA (Rx)
1.5:1 source & load
VSWR, 10us PW, 1%
DC
57
Switching Speed
T
SW
usec
10% to 90% RF voltage
1.5
2.0
Input 3
rd
Order
Intercept Point
IIP3
F1=1 GHz, F2=1.01GHz
P1=P2=0 dBm
60
65