RELEASED
RFuW Engineering, Ltd. sales@rfuw-engineering.com www.RFuW-Engineering.com 1
MSW2T-2060-195/MSW2T-2061-195/MSW2T-2062-195
SP2T Surface Mount High Power PIN Diode Switch
Features:
Surface Mount SP2T Switch: 5mm x 8mm x 2.5mm
Industry Leading Average Power Handling: 100W CW
High Peak Power: 550W
Low Insertion Loss : < 0.25 dB
High IP3: >65 dBm
High Bias Voltage supports High Linearity
RoHS Compliant
Description:
The MSW2T-206x-195 series of surface mount High Power PIN Diode switches leverage high reliability hybrid
manufacturing processes which yield proven superior performance to both MMIC and Glass Carrier based
technologies. The hybrid design approach permits precise PIN Diode selection to optimize RF performance
while maintaining competitive cost targets. The small form factor (8mm x 5mm x 2.5mm) offers world class
power handling, low insertion loss, and superior intermodulation performance exceeding all competitive
technologies.
Typical Applications:
Radar T/R Modules
Switch Bank Filters
Mil-Com Radios
The MSW2T206x-195 series of High Power SP2T switches are intended for use in high power, high reliability,
mission critical applications across the HF to C Band frequency ranges. The manufacturing process has been
proven through years of extensive use in high reliability applications.
The MSW2T-206x-195 family of SP2T switches are fully RoHS compliant.
ESD and Moisture Sensitivity Level Rating:
The MSW2T-206X-195 carries an ESD ratings of Class 1C, Human Body Model (HBM) and a moisture
sensitivity rating of MSL 1.
RELEASED MSW2T-2061-195 Rev 1.4
RFuW Engineering, Ltd. sales@rfuw-engineering.com www.RFuW-Engineering.com 2
MSW2T-2060-195 Specifications @ Zo = 50Ω; Ta = +25°C
Parameter
Symbol
Units
Test Conditions
Min
Value
Typical
Value
Max
Value
Frequency
F
MHz
20
1,200
J0-J1 or J0-J2
Insertion Loss (Note
1)
IL
dB
-180V @ -50mA (ON)
+1V @ +25 mA (OFF)
0.25
0.35
J0-J1 or J0-J2
Return Loss (Note 1)
RL
dB
-180V @ -50mA (ON)
+1V @ +25 mA (OFF)
20
23
J0-J1 or J0-J2
Isolation (Note 1)
ISO
dB
-180V @ -50mA (ON)
+1V @ +25 mA (OFF)
49
53
CW Incident Power
(Note 1)
P inc (CW)
dBm
-180V @ -50mA (ON)
+1V @ +25 mA (OFF)
1.5:1 Source & Load
VSWR
50
Peak Incident Power
(Note 1)
P inc (Pk)
dBm
-180V @ -50mA (ON)
+1V @ +25 mA (OFF)
1.5:1 Source & Load
VSWR
57 @ 10
uS Pulse,
1% Duty
Switching Speed
Ts
ns
(10%-90%) RF Voltage
TTL rep rate = 100 kHz
750
1,000
Input 3
rd
Order
Intercept Point
IIP3
dBm
F1 = 2,000 MHz
F2 = 2,010 MHz
P1 = P2 = +40 dBm
-180V @ -50 mA (ON)
+1V @ +25 mA (OFF)
60
65
MSW2T-2061-195 Specifications @ Zo = 50Ω; Ta = +25°C
Parameter
Symbol
Units
Min
Value
Typical
Value
Max
Value
Frequency
F
MHz
200
4,500
J0-J1 or J0-J2
Insertion Loss (Note
1)
IL
dB
0.5
0.7
J0-J1 or J0-J2
Return Loss (Note 1)
RL
dB
14
16
J0-J1 or J0-J2
Isolation (Note 1)
ISO
dB
32
35
CW Incident Power
(Note 1)
P inc (CW)
dBm
50
Peak Incident Power
(Note 1)
P inc (Pk)
dBm
57 @ 10
uS Pulse,
1% Duty
Switching Speed
Ts
ns
750
1,000
Input 3
rd
Order
Intercept Point
IIP3
dBm
60
65