RELEASED
RFuW Engineering, Ltd. www.rfuw-engineering.com 1
MSW2T-2030-192/MSW2T-2031-192/MSW2T-2032-192
SP2T Surface Mount High Power PIN Diode Switch
Features:
Wide Operating Frequency Band: 50 MHz to 6 GHz
Surface Mount SP2T Switch: 5mm x 8mm x 2.5mm
Industry Leading Average Power Handling: 100W CW
High RF Peak Power: 550W
Low Insertion Loss: < 0.25 dB
High IP3 >65 dBm
High Linearity
RoHS Compliant
Description:
The MSW2T-203X-192series SP2T surface mount High Power PIN Diode switches are available in three
operating frequency bands: MSW2T-2030-192 operates from 50 MHz to 1 GHz; MSW2T-2031 operates from
400 MHz to 4 GHz , and MSW2T-2032-192 operates from 2 GHz to 6 GHz. The MSW2T-203X-192 Series of
high power switches leverage high reliability hybrid manufacturing processes which yield proven superior
performance relative to both MMIC and Glass Carrier based technologies. The hybrid design approach permits
precise PIN Diode selection to optimize RF performance while maintaining competitive cost targets. The small
form factor (8mm x 5mm x 2.5mm) offers world class power handling, low insertion loss, and superior
intermodulation performance exceeding all competitive technologies.
Typical Applications:
Radar T/R Modules
Switch Bank Filters
Mil-Com Radios
The MSW2T-203X-192 series of High Power SP2T switches are intended for use in high power, high reliability,
mission critical applications across the HF to C Band frequency ranges. The manufacturing process has been
proven through years of extensive use in high reliability applications.
RELEASED MSW2T-203X-192 Rev 1.2
RFuW Engineering, Ltd. www.rfuw-engineering.com 2
ESD and Moisture Sensitivity Level Rating:
The MSW2T-203X-192 family of SP2T switches are fully RoHS compliant. They possess an ESD rating of
Class 1C, Human Body Model (HBM) and a moisture sensitivity rating of MSL 1.
MSW2T-203X-192 Schematic
MSW2T-2030-192Electrical Specifications @ Zo = 50Ω; Ta = +25°C
Parameter
Symbol
Test Conditions
Min
Value
Typical
Value
Max
Value
Units
Frequency
F
50
1,000
MHz
J0-J1 or J0-J2
Insertion Loss
(Note 1)
IL
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
0.30
0.40
dB
J0-J1 or J0-J2
Return Loss
(Note 1)
RL
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
20
22
dB
J0-J1 or J0-J2
Isolation (Note 1)
ISO
Bias State 1: port J0 to J1
Bias State 2: port J0 to J2
50
52
dB
CW Incident
Power
(Note 1)
P
inc
(CW)
1.5:1 Source & Load
VSWR
50
51
dBm
Peak Incident
Power
(Note 1)
P
inc
(Pk)
1.5:1 Source & Load
VSWR; pw = 10 us, duty
cycle = 1%
57
dBm
Switching Speed
t
sw
(10%-90%) RF Voltage
TTL rep rate = 100 kHz
750
1,000
ns
Input 3
rd
Order
Intercept Point
IIP3
F1 = 500 MHz
F2 = 510 MHz
P1 = P2 = +10 dBm
Measured on path biased
to low loss state
60
65
dBm