PRELIMINARY
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MSW2T-2020-191
SP2T Surface Mount High Power Series PIN Diode Switch
Features:
Surface Mount SP2T Switch: 5mm x 8mm x 2.5mm
Industry Leading Average Power Handling: +52 dBm (CW)
Frequency Range: 50 MHz to 1 GHz
Support High RF Peak Power: Handling: +57 dBm
Low Insertion Loss: < 0.20 dB
High IP3: >65 dBm
Operates for Positive Voltage Only: (+5V & -200V)
RoHS Compliant
Description:
The MSW2T-2020-191 surface mount asymmetrical SP2T High Power PIN Diode switch will safely handle up to
+52 dBm (CW) and +57 dBm Peak Power. The MSW2T-2020-191 SP2T leverages high reliability hybrid
manufacturing processes which yield proven superior performance to both MMIC and Glass Carrier based
technologies. The hybrid design approach permits precise PIN Diode selection to optimize RF performance
while maintaining competitive cost targets. The MSW2T-2020-191 is an asymmetrical SP2T which was
designed to maximize the Tx-Rx Isolation while minimizing the Tx-ANT loss. The MSW2T-2020-191 can safely
handle CW powers of up to +52 dBm and peak power levels up to +57 dBm while being operated at an ambient
temperature of +85
o
C. The small form factor (8mm x 5mm x 2.5mm) offers world class power handling, low
insertion loss, and superior intermodulation performance while exceeding all competitive technologies.
Typical Applications:
Radar T/R Modules
Switch Bank Filters
Mil-Com Radios
The MSW2T-2020-191 series of High Power SP2T switches are intended for use in high power, high reliability,
mission critical applications across the 50 MHz to 1.0 GHz Band frequency ranges. The manufacturing process
has been proven through years of extensive use in high reliability applications.
The MSW2T-2020-191 SP2T switches are fully RoHS compliant.
PRELIMINARY MSW2T-2020-191 Rev A
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ESD and Moisture Sensitivity Level Rating:
The MSW2T-2020-191 carries an ESD rating of Class 1C, Human Body Model (HBM) and a moisture sensitivity
rating of MSL 1.
MSW2T-2020-191 Specifications @ Zo = 50Ω; Ta = +25°C
Parameter
Symbol
Unit
Test Conditions
Min
Value
Typical
Value
Max
Value
Frequency
F
MHz
50
1,000
Tx-Ant IL
IL(Tx)
dB
+5V @ 100 mA (Tx)
-200V @ 25 mA (Rx)
0.20
0.30
Ant-Rx IL
IL(Rx)
dB
+5V @ 100 mA (Rx)
-200V @ 0 mA (Tx)
0.30
0.40
Tx-Ant RL
RL(Tx)
dB
+5V @ 100 mA (Tx)
-200V @ 25 mA (Rx)
18
20
Ant-Rx RL
RL(Rx)
dB
+5V @ 100 mA (Rx)
-200V @ 0 mA (Tx)
18
20
Tx-Rx Isolation
ISO(Rx)
dB
+5V @ 100 mA (Tx)
-200V @ 25 mA (Rx)
40
45
Rx-Tx Isolation
ISO(Tx)
dB
+5V @ 100 mA (Rx)
-200V @ 0 mA (Tx)
20
23
CW Incident
Power, Ant-Tx
Low Loss State
(Note 2)
P
inc
(CW)
dBm
+5V @ 100 mA (Tx)
-200V @ 25 mA (Rx)
1.5:1 source & load
VSWR
52
CW Incident
Power, Ant-Rx
Low Loss State
(Note 2)
P
inc
(CW)
dBm
+5V @ 100 mA (Rx)
-200V @ 0 mA (Tx)
1.5:1 source & load
VSWR
40
Peak Incident
Power Ant-Tx
Low Loss State
P
inc
(PK)
dBm
+5V @ 100 mA (Tx)
-200V @ 25 mA (Rx)
1.5:1 source & load
VSWR, 10us PW, 1%
DC
57
Switching Speed
T
SW
usec
10% to 90% RF voltage
1.5
2.0
Input 3
rd
Order
Intercept Point
IIP3
F1= 500 MHz,
F2= 510 MHz
P1=P2=0 dBm
60
65