Features
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
260
o
C / 10 seconds at terminals
Mechanical Data
Case: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.1 gram
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
SS
52
SS
53
SS
54
SS
55
SS
56
SS
59
SS
510
SS
515
Units
Maximum Recurrent Peak Reverse Voltage
V
RRM
20 30 40 50 60 90 100 150 V
Maximum RMS Voltage
V
RMS
14 21 28 35 42 63 70 105 V
Maximum DC Blocking Voltage
V
DC
20 30 40 50 60 90 100 150 V
Maximum Average Forward Rectified Current
at T
L
(See Fig. 1)
I
(AV)
5.0 A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
I
FSM
120 A
Maximum Instantaneous Forward Voltage
@ 5.0A
V
F
0.55 0.75 0.85 0.95 V
0.5 0.3
Maximum DC Reverse Current (Note 1)
@ T
A
=25
o
C
at Rated DC Blocking Voltage
@ T
A
=125
o
C
I
R
20 10 5.0
mA
mA
Typical Thermal Resistance ( Note 2 )
R
θJL
R
θJA
17
55
o
C/W
Operating Temperature Range T
J
-55 to +125 -55 to +150
o
C
Storage Temperature Range T
STG
-55 to +150
o
C
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.6” x 0.6”(16mm x 16mm) Copper Pad Areas.
Unit: inch (mm)
SMC/DO-214AB
.245(6.22)
.103(2.62)
.128(3.25)
.280(7.11)
.012(.305)
.008(.203)
.320(8.13)
.050(1.27)
.220(5.59)
.079(2.00)
.108(2.75)
.260(6.60)
.006(.152)
.002(.051)
.305(7.75)
.030(0.76)
®
SS52 thru SS515
Pb
SS52 thru SS515
5.0 AMP. SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
Pb Free Plating Product
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Page 1/2
RATINGS AND CHARACTERISTIC CURVES ( SS52 THRU SS515)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2-MAXIMUM NON-REPETIVE PEAK
FORWARD SURGE CURRENT
FIG.3-TYPICAL FORWARD CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
FIG.5-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE.(V)
O
LEAD TEMPERATURE.( C)
NUMBER OF CYCLES AT 60HZ
FORWARD VOLTAGE(V)
PULSE DURATION,(sec)
5
4
3
2
1
0
0
50
100
150
50
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.5
20
10
1
0.1
0.01
0.001
0
20
40
60
80
100
120
140
100
10
1
0.1
0.01
0.1
1
10
100
100
10
1
1
10
100
1000
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
AVERAGE FORWARD CURRENT (A)
INSTANEDLIS REVERSE CURRENT.(mA)
INSTANTANEOUS FORWARD CURRENT(A)
o
TRANSCIENT THERMAL IMPEDANCE. ( C/W )
JUNCTION CAPACITSNCE(pF)
S
S
5
6
-S
S5
1
5
RESISTIVEOR
INDUCTIVE LOAD
O
TJ=125 C
O
TJ=75 C
O
TJ=25 C
SS52 -S S54
SS5 6 -S S515
SS
5
2 -S
S
54
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
Tj=25 C
f=1.0MHZ
Vsig=50mvp-p
SS52 -SS54
SS56 -SS 515
PEAK FORWARD SURGE CURRENT. (A)
1
10
100
200
60
80
300
100
400
600
8.3ms Single Half Sine Wave
JEDEC Method
cycle
PULSE WIDTH=300
s
1%DUTY GYGLE
SS515
S
S
5
2
-S
S
5
4
S
S
5
5
-S
S
5
6
S
S
5
9
-
S
S
5
1
0
®
SS52 thru SS515
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Page 2/2