MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Rating at 25
o
C
ambient temperature unless otherwise specified.
NOTES :
-55 to +150
MUR3005PT
SYMBOL
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
V
F
I
R
Trr
C
J
T
J
, T
STG
50 100 200
140
200
400
35
70
280
50 100 400
600
420
600
30.0
10
300
1.3 1.50.95
35 60
500
150
UNIT
V
V
V
V
A
A
uA
uA
o
C
pF
nS
300
210
300
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Peak Forward Surge Current, 8.3ms single
Maximum Instantaneous Forward Voltage
Maximum DC Reverse Current @T
J
=25
o
C
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Current T
C
=125
o
C
Half sine-wave superimposed on rated load
(JEDEC method)
@ 15.0 A
At Rated DC Blocking Voltage @T
J
=125
o
C
Maximum Reverse Recovery Time (Note 1)
Temperature Range
(1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
TO-3P/TO-247AD
Unit: inch (mm)
Features
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
260
o
C, 0.16”(4.06mm)from case for 10 seconds
Mechanical Data
Terminals:
Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 grams
Positive
Negative
Suffix "PA"
Doubler
Suffix "GD"
Cases: TO-3P/TO-247AD Package Type
Suffix "PT"
®
MUR3005 thru MUR3060
Pb Free Plating Product
MUR3005 thru MUR3060
30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes
Pb
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Page 1/2
"PA"
Common Cathode Suffix "PT"
Common Anode Suffix
"GD"
Anode and Cathode Coexistence Suffix
MUR3010PT MUR3020PT MUR3030PT MUR3040PT MUR3060PT
MUR3005PA MUR3010PA MUR3020PA MUR3030PA MUR3040PA MUR3060PA
MUR3005GD MUR3010GDMUR3020GD MUR3030GDMUR3040GD MUR3060GD
0.640(16.25)
0.620(15.75)
0.142(3.60)
0.125(3.20)
0.087(2.20)
0.070(1.80)
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
0.600(15.25)
0.580(14.75)
0.839(21.30)
0.819(20.80)
0.170(4.30)
0.145(3.70)
0.798(20.25)
0.777(19.75)
0.199(5.05)
0.175(4.45)
0.095(2.40)
0.030(0.75)
0.017(0.45)
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
30
15
10
5
20
25
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
1.0
10
100
0.1
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6
0
0 50 100 150
LEAD TEMPERATURE,
o
C
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
NUMBER OF CYCLES AT 60Hz
0
50
100
150
200
250
300
1 10 100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
0.01
0
0.1
1
100
10
20 40 60 80 100
FIG.5 - TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, VOLTS
0.1
10
JUNCTION CAPACITANCE, pF
1000
1.0 4.0 10 100
100
60 Hz Resistive or
Inductive load
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
T
J
=25
o
C
PULSE WIDTH=300uS
1% DUTY CYCLE
T
J
=125
o
C
T
J
=25
o
C
T
J
= 25
o
C
f = 1.0 MHZ
Vsig = 50mVp-p
MUR3005-MUR3020
®
MUR3005 thru MUR3060
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Page 2/2
MUR3030-MUR3040
MUR3060