DMC3018LSD
Document number: DS31310 Rev. 10 - 3
1 of 8
www.diodes.com
December 2014
© Diodes Incorporated
DMC3018LSD
NEW PRODUCT
D2
S2
G2
D1
S1
G1
COMPLEME
NTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(on)
max
I
D
Max
T
A
= +25°C
Q2 30V
20mΩ @ V
GS
= 10V
9.1A
32mΩ @ V
GS
= 4.5V
7.2A
Q1 -30V
45mΩ @ V
GS
= -10V
-6A
65mΩ @ V
GS
= -4.5V
-5A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• Power Management Functions
• Analog
Switch
•
Load
Sw
itch
Features
• Complementary Pair MOSFET
•
Lo
w On-Resistanc
e
•
Low Gate Thresh
old Voltage
•
Low Input Capac
itance
•
Fast Sw
itching Speed
•
Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Quali
fied to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
•
Case Material: Molded Plastic, ��Green” Molding Co
mpound. UL
F
lammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Conne
ctions: See Diagram
•
Terminals: Finish - Matte Tin annealed over Copper
lead frame.
Solderable per M
IL-STD-202, Method 208
• Weight: 0.072g (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMC3018LSD-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
a
nd Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<10
00ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
Top View
SO-8
S2
D1
S1
D2
G1
G2
D2
D1
P-Channel MOSFET
N-Channel MOSFET
1
4
8
5
C3018LD
Y
Y W
W
1
4
8
5
C30
1
8
LD
Y
Y W
W
Chengdu A/T Site
Shanghai A/T Site
= Manufacturer’s Marking
C3018LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
NOT RECOMMENDED FOR NEW
DESIGN USE DMC3021LSD
e3
DMC3018LSD
Document number: DS31310 Rev. 10 - 3
2 of 8
www.diodes.com
December 2014
© Diodes Incorporated
DMC3018LSD
NEW PRODUCT
Maximum Ratings N-CHANNEL – Q2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current (Note 5)
T
A
= +25°C
T
A
= +70°C
I
D
9.1
7.7
A
Pulsed Drain Current (Note 6)
I
DM
32 A
Maximum Ratings P-CHANNEL – Q1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current (Note 5)
T
A
= +25°C
T
A
= +70°C
I
D
-6
-5
A
Pulsed Drain Current (Note 6)
I
DM
-21 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
2.5 W
Thermal Resistance, Junction to Ambient
R
θ
JA
50
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics N-CHANNEL – Q2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30
⎯ ⎯
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
1 µA
V
DS
= 24V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
± 100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1 1.9 2.1 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
⎯
18
29
20
32
mΩ
V
GS
= 10V, I
D
= 6.9A
V
GS
= 4.5V, I
D
= 5.0A
Forward Transfer Admittance
|Y
fs
|
⎯
10
⎯
S
V
DS
= 5V, I
D
= 6.9A
Diode Forward Voltage (Note 7)
V
SD
0.5
⎯
1.2 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
631
⎯
pF
V
DS
= 15V, V
GS
= 0V, f =1.0MHz
Output Capacitance
C
oss
⎯
147
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
99
⎯
pF
Gate Resistance
R
G
⎯
0.9
⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
g
⎯
5.9
12.4
⎯
nC
V
DS
= 15V, V
GS
= 4.5V, I
D
= 7A
V
DS
= 15V, V
GS
= 10V, I
D
= 9A
Gate-Source Charge
Q
gs
⎯
1.8
⎯ V
DS
= 15V, V
GS
= 10V, I
D
= 9A
Gate-Drain Charge
Q
gd
⎯
3.4
⎯
V
DS
= 15V, V
GS
= 10V, I
D
= 9A
Notes: 5. Device mounted on FR-4 PCB, on 2oz. Copper pads with R
ΘJA
= 50°C/W
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.