DMP1022UFDE
Datasheet number: DS35477 Rev. 12 - 3
1 of 8
www.diodes.com
October 2017
© Diodes Incorporated
DMP1022UFDE
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON)
Max
I
D
Max
T
A
= +25°C
-12V
16mΩ @ V
GS
= -4.5V
-9.1A
21.5mΩ @ V
GS
= -2.5V
-7.9A
26mΩ @ V
GS
= -1.8V
-7.0A
32mΩ @ V
GS
= -1.5V
-6.3A
Description
This MOSFET is designed specifically for use in battery management
applications.
Features
0.6mm Profile – Ideal For Low Profile Applications
PCB Footprint of 4mm
2
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected to 3KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMP1022UFDEQ)
Mechanical Data
Case: U-DFN2020-6 (Type E)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (Approximate)
Ordering Information (Note 4)
Marking
Reel Size (inches)
Quantity Per Reel
P4
7
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2011
~
2015
2016
2017
2018
2019
2020
2021
2022
2023
Code
Y
~
C
D
E
F
G
H
I
J
K
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Bottom View
Pin Out
ESD PROTECTED
Internal Schematic
P4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
P4
YM
D
D
D
D
1
2
6
5
S S G 34
U-DFN2020-6 (Type E)
Bottom View
Pin1
e4
D
S
G
Gate Protection
Diode
NOT RECOMMENDED FOR NEW DESIGN
USE DMP1005UFDF
DMP1022UFDE
Datasheet number: DS35477 Rev. 12 - 3
2 of 8
www.diodes.com
October 2017
© Diodes Incorporated
DMP1022UFDE
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-12
V
Gate-Source Voltage
V
GSS
±8
V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-9.1
-7.2
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
-11.2
-9.0
A
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
I
DM
-90
A
Continuous Source-Drain Diode Current
T
A
= +25°C
T
C
= +25°C
I
S
-2.5
-7.1
A
Pulsed Source-Drain Diode Current (10μs Pulse, Duty Cycle = 1%)
I
SM
-50
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.66
W
T
A
= +70°C
0.42
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
189
°C/W
t<5s
123
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.03
W
T
A
= +70°C
1.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
61
°C/W
t<5s
40
Thermal Resistance, Junction to Case (Note 6)
Steady State
R
θJC
9.3
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
NOT RECOMMENDED FOR NEW DESIGN
USE DMP1005UFDF