1/2 www.asb.co.kr January 2009
QR-HEMT-DFN6-A
The Qualification Report of ASB’s InGaAs E-pHEMT Amplifiers
Reliability & Qualification Report
1. Introduction
This ‘Qualification Report’ is to provide insight to our customers concerning the reliability of ASB’s
high linearity low noise amplifiers, which are manufactured by InGaAs Enhanced-mode pHEMT sem-
iconductor process. Reliability is defined as product performance to specification over time in re-
sponse to varied environmental stress. The ultimate goal of our qualification program is to achieve
continuous improvement in the robustness of the product being evaluated. Finished product reliability
is measured periodically to ensure that the product performance meets or exceeds internal and external
qualification specifications. Qualification programs are executed in response to internal programs as
well as to individual customer requirements. In-house tests are performed and supervised by experi-
enced ASB employees per a qualification system that conforms to the requirements of ISO 9001:2000,
ISO 14001:2004, and JEDEC standards. Several qualification tests are carried out periodically at our
subcontractor site per its standard procedure. ASB has been ISO 9001- and ISO 14001- certified by
Korea International Standards Certification (KIC) since September 2004 and October 2005. The com-
pany strives to provide cost effective and state-of-the-art solutions to its customers in a timely manner
while consistently meeting or exceeding their quality, reliability, and service expectations.
2. An Image of DFN6 Encapsulated Plastic Package
A plastic encapsulated DFN6 package is assembled in our subcontractor assembly house at a highly
reproducible volume with quality assurance. A very thinned semiconductor die is attached on a cop-
per lead via thermally and electrically conductive silver epoxy and encapsulated by an epoxy mold-
ing compound (EMC) with a low thermal expansion coefficient.
(Fig. 1) An image of a plastic encapsulated DFN6 package.
Applicable Products
ASL19D, AST20D, AST30S
Semiconductor Technology
InGaAs Enhanced-mode pHEMT Process
Package Type
DFN6
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QR-HEMT-DFN6-A
The Qualification Report of ASB’s InGaAs E-pHEMT Amplifiers
3. Qualification Method
ASB employs the reliability & qualification program to ensure that our products operate reliably and
consistently against various environments for a long period of time. Pursuant to JEDEC standard, the
tests are carried out to monitor the possible failure modes of the products, which arises from design
robustness, semiconductor manufacturing process, and assembly process. The monitoring parameters
for qualification test are a device current (I
D
) and a small-signal gain (S
21
) and failure criteria are 10%
change in I
D
and 1 dB change in S
21
.
4. Qualification Tests
Test Name
Standard
Method & Condition
Size (pcs)
No. of
Failed
Parts
Remarks
High Temp.
Operating Life
(HTOL)
JESD22-A108
. 1000 hrs @ 125C case temp
. DC-biased
64
0
Unbiased
Autoclave
JESD22-A102
. 96 hrs @ 121C & 15 psig
. Unbiased
150
0
Temperature
Cycling
JESD22-A104
. Cycling Temp: -65C ~ +150C
. 500 cycles
. Dwell Time: 10~15 minutes
. Unbiased
150
0
High Temp
Storage
JESD22-A103
. 1000 hrs @ 150C
. Unbiased
150
0
Solderability
JESD22-B102
. 260C
. Dwell Time: 5 sec
30
0
Moisture/Reflow
Sensitivity
J-STD-020D
. Soak: 192 hrs @ 30C & 60% RH
. 3 times IR reflow @ 260C
. Unbiased
30
0
ESD
Human Body
Model (HBM)
JESD22-A114
. Record distribution of all failing pins
20
-
As in
datasheet
ESD
Machine Model
(MM)
JESD22-A115
. Record distribution of all failing pins
20
-
As in
datasheet