SENSITRON
SEMICONDUCTOR
Technical Data
DATASHEET 5361, Rev. -
©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 www.sensitron.com sales@sensitron.com Page 1
SPM1001
THREE-PHASE IGBT BRIDGE with SiC DIODES,
BRAKE MOSFET and INTEGRATED BRAKE RESISTOR
DESCRIPTION:
600 VOLT, 50 AMP, THREE PHASE IGBT BRIDGE
SILICON CARBIDE (SiC) 20A 600V ANTI PARALLEL DIODES – ZERO RECOVERY AND NO
ADDITIONAL LOSSES ON COMPLIMENTARY IGBT
600V, 22A BRAKE MOSFET
INTEGRATED G-E AND G-S RESISTORS FOR HIGHER ESD IMMUNITY
INTEGRATED BRAKE RESISTOR WITH DIRECT HEAT TRANSFER TO BASE
RTD TO MONITOR MODULE TEMPERATURE
AlSiC BASE PLATE FOR HIGH TEMPERATURE CYCLING CAPABILITY
LOW PROFILE LIGHT WEIGHT PACKAGE
SENSITRON
SEMICONDUCTOR
Technical Data
DATASHEET 5361, Rev. -
©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 www.sensitron.com sales@sensitron.com Page 2
SPM1001
THREE PHASE IGBT SECTION
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=25
0
C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Collector to Emitter Breakdown Voltage
I
C
= 1mA, V
GE
= 0V
BV
CES
600
-
-
V
Gate Threshold Voltage
I
C
= 1mA, V
CE
= V
GE
V
GETH
4.5
5.5
6.5
V
Continuous Collector Current T
C
= 25
O
C
T
C
= 80
O
C
I
C
-
-
50
28
A
Zero Gate Voltage Collector Current
V
CE
= 600V, V
GE
= 0V T
i
= 25
o
C
V
CE
= 480V, V
GE
= 0V T
i
= 125
o
C
I
CES
-
-
0.5
15
mA
mA
Collector to Emitter Saturation Voltage, T
j
= 25
O
C
I
C
= 50A, V
GE
= 15V T
j
= 125
O
C
V
CE(SAT)
-
2.1
2.3
2.5
V
Gate to Emitter Leakage Current
V
CE
= 0V, V
GE
= 20V
I
GES
200
nA
IGBT Gate – Emitter Resistance
-
100
-
K Ohm
IGBT turn-on switching loss
V
CE
= 300V, I
C
= 50A, T
j
= 25
o
C
E
ON
-
0.6
-
mJ
IGBT turn-off switching loss
V
CE
= 300V, I
C
= 50A, T
j
= 25
o
C
E
OFF
-
1.6
-
mJ
Junction To Case Thermal Resistance
R
JC
-
-
0.75
o
C/W
Diode Peak Inverse Voltage
PIV
600
-
-
V
Continuous Forward Current, T
C
= 80
O
C
I
F
-
-
20
A
Diode Forward Voltage I
F
= 20A, Tj = 25
O
C
Tj = 125
O
C
V
F
-
1.8
2.1
2.0
V
Total Capacitive Charge
I
F
=20A, V
RR
= 300V, T
j
= 25
O
C
Q
c
-
50
-
nC
Junction To Case Thermal Resistance
R
JC
-
-
1.0
o
C/W