SURFACE MOUNT SCHOTTKY BARRIER DIODES
Features
Low Forward Voltage Drop
Guard Ring Construction for Transient
Protection
Fast Switching Speed
Low Capacitance
Surface Mount Package Ideally Suited for
Automatic Insertion
1N5711WS
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Case: SOD-323, Molded Plastic
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Terminals: Plated Leads Solderable per
MIL-STD- 202, Met hod 208
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Polarity: Cathode Band
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Weight: 0.004 grams (approx.)
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Marking: A3
Mechanical Data
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Symbol Value Unit
70
Power Dissipation (Infinite Heatsink)
P
D
400
(1)
mW
Maximum Single Cycle Surge 10 µs Square Wave
I
FSM
2 A
Thermal Resistance Junction to Ambient Air R
θ
JA
0.3
(1)
°C/mW
Junction Temperature
T
J
125
(1)
°C
Storage temperature range
T
S
-55 to + 150
(1)
°C
Electrical Characteristics (T
J
= 25°C unless otherwise noted)
Parameter Symbol
Min Typ Max Unit
I
R
= 10 µA
70 - -
Reverse Current
I
R
V
R
= 50 V
- - 200 nA
I
F
= 1mA
- - 0.41
I
F
= 15mA
- - 1.0
- -
2.0
I
F
= I
R
= 5mA,
recover to 0.1I
R
Note:
(1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature..
Parameter
Repetitive Peak Reverse Voltage
V
RRM
V
Reverse Breakdown Voltage
V
(BR)R
Forward Voltage Drop
V
V
Test Condition
--
Diode Capacitance
Reverse Recovery Time
V
F
Cd
Trr
pF
ns1
V
R
= 0 V, f = 1MHz
Maximum Ratings
T
A
= 25C unless otherwise specified
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SOD-323
Dim Min Max
A
2.30 2.70
B
1.75 1.95
C
1.15 1.35
D
0.25 0.35
E
0.05 0.15
G
0.70 0.95
H
0.30 —
All Dimensions in mm
G
A
C
E
H
D
B
0.01
0.1
1.0
10
0
0.5
1.0
I , FORWARD CURRENT (mA)
F
V , FORWARD VOLTAGE (V)
Fi
g.2 Typical Forward Characteristics
F
0
50
0
25
50
75
125
100
150
P , POWER DISSIPATION (mW)
d
T , AMBIENT TEMPERATURE ( C)
Fi
g. 1 Derating Curve
A
°
100
200
150
R = 625ºC/W
θJA
0
100
80
60
40
20
0 0.5 1
I , FORWARD CURRENT (mA)
F
V , FORWARD VOLTAGE (V)
F
Fig.3Typical Forward Characteristics
0.01
0.1
1
10
100
0
10
20
30
40
50
I , REVERSE CURRENT (mA)
R
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Reverse Characteristics
T = 125°C
j
T = 150°C
j
T = 100°C
j
T = 75°C
j
T = 50°C
j
T = 25°C
j
0
1
2
01020304050
C ,TOTAL CAPACITANCE (pF)
T
V , REVERSE VOLTAGE (V)
R
Fig. 5 Total Capacitance vs Reverse Voltage
f = 1MHz
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