Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Aug. 2017. Rev. 3.0 1/6
SW4N65K2
N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220F
TO-251N
TO-252
V
DSS
Drain to source voltage
650
V
I
D
Continuous drain current (@T
C
=25
o
C)
4*
A
Continuous drain current (@T
C
=100
o
C)
2.5*
A
I
DM
Drain current pulsed (note 1)
16
A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2)
50
mJ
E
AR
Repetitive avalanche energy (note 1)
5
mJ
dv/dt
MOSFET dv/dt ruggedness (@VDS=0~400V)
30
V/ns
dv/dt
Peak diode recovery dv/dt (note 3)
20
V/ns
P
D
Total power dissipation (@T
C
=25
o
C)
16.7
73.5
65.4
W
Derating factor above 25
o
C
0.13
0.59
0.53
W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature
-55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220F TO-251N TO-252
R
thjc
Thermal resistance, Junction to case 7.5 1.7 1.9
o
C/W
R
thja
Thermal resistance, Junction to ambient 86 103
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
: 650V
I
D
: 4 A
R
DS(ON)
: 1.10Ω
1. Gate 2. Drain 3. Source
TO-220F
1
2
3
Order Codes
Item
Marking
Package
Packaging
1
SW4N65K2
TO-220F
TUBE
2
SW4N65K2
TO-251N
TUBE
3
SW4N65K2
TO-252
REEL
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 1.10Ω)@V
GS
=10V
Low Gate Charge (Typ 7.1nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:LED, Charge, Adaptor
General Description
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
TO-251N
1
2
3
TO-252
1
2
3
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Aug. 2017. Rev. 3.0 2/6
SW4N65K2
Electrical characteristic ( T
C
= 25
o
C unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS
=0V, I
D
=250uA
650
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D
=250uA, referenced to 25
o
C
0.57
V/
o
C
I
DSS
Drain to source leakage current
V
DS
=650V, V
GS
=0V
1
uA
V
DS
=520V, T
C
=125
o
C
50
uA
I
GSS
Gate to source leakage current, forward
V
GS
=30V, V
DS
=0V
100
nA
Gate to source leakage current, reverse
V
GS
=-30V, V
DS
=0V
-100
nA
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS
=V
GS
, I
D
=250uA
2
4
V
R
DS(ON)
Drain to source on state resistance
V
GS
=10V, I
D
=2A
1.10
1.25
Ω
G
fs
Forward transconductance
V
DS
=10V, I
D
=2A
3.5
S
Dynamic characteristics
C
iss
Input capacitance
V
GS
=0V, V
DS
=200V, f=1MHz
278
pF
C
oss
Output capacitance
25
C
rss
Reverse transfer capacitance
2.6
t
d(on)
Turn on delay time
V
DS
=350V, I
D
=4A, R
G
=25Ω,
V
GS
=10V
(note 4,5)
11
ns
t
r
Rising time
24
t
d(off)
Turn off delay time
23
t
f
Fall time
22
Q
g
Total gate charge
V
DS
=560V, V
GS
=10V, I
D
=4A
(note 4,5)
7.1
nC
Q
gs
Gate-source charge
1.6
Q
gd
Gate-drain charge
2.6
R
g
Gate resistance
V
DS
=0V, Scan F mode
3.7
Ω
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
4
A
I
SM
Pulsed source current
16
A
V
SD
Diode forward voltage drop.
I
S
=4A, V
GS
=0V
1.4
V
t
rr
Reverse recovery time
I
S
=4A, V
GS
=0V,
dI
F
/dt=100A/us
173
ns
Q
rr
Reverse recovery charge
1.1
uC
※. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L =100mH, I
AS
=1.0A, V
DD
= 50V, R
G
=25Ω, Starting T
J
= 25
o
C
3. I
SD
≤4A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.