Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2016. Rev. 3.0 1/6
SW4N65DC
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-251 TO-251N-S2
V
DSS
Drain to source voltage 650 V
I
D
Continuous drain current (@T
C
=25
o
C) 4* A
Continuous drain current (@T
C
=100
o
C) 2.5* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 184 mJ
E
AR
Repetitive avalanche energy (note 1) 30 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 147 147 W
Derating factor above 25
o
C 1.18 1.18 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-251 TO-251N-S2
R
thjc
Thermal resistance, Junction to case 0.85 0.85
o
C/W
R
thja
Thermal resistance, Junction to ambient 90 90
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW I 4N65DC
SW4N65DC TO-251 TUBE
2 SW NC4N65DC
SW4N65DC TO-251N-S2 TUBE
N-channel Enhanced mode TO-251/TO-251N-S2 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 1.95Ω)@V
GS
=10V
Low Gate Charge (Typ 17nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Charger,TV-POWER
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 650V
I
D
: 4A
R
DS(ON)
: 1.95Ω
1
2
3
TO-251
1
2
3
TO-251N-S2
1
2
3