Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2016. Rev. 3.0 1/6
SW4N65DC
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-251 TO-251N-S2
V
DSS
Drain to source voltage 650 V
I
D
Continuous drain current (@T
C
=25
o
C) 4* A
Continuous drain current (@T
C
=100
o
C) 2.5* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 184 mJ
E
AR
Repetitive avalanche energy (note 1) 30 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 147 147 W
Derating factor above 25
o
C 1.18 1.18 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-251 TO-251N-S2
R
thjc
Thermal resistance, Junction to case 0.85 0.85
o
C/W
R
thja
Thermal resistance, Junction to ambient 90 90
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW I 4N65DC
SW4N65DC TO-251 TUBE
2 SW NC4N65DC
SW4N65DC TO-251N-S2 TUBE
N-channel Enhanced mode TO-251/TO-251N-S2 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 1.95)@V
GS
=10V
Low Gate Charge (Typ 17nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Charger,TV-POWER
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 650V
I
D
: 4A
R
DS(ON)
: 1.95Ω
1
2
3
TO-251
1
2
3
TO-251N-S2
1
2
3
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2016. Rev. 3.0 2/6
SW4N65DC
Electrical characteristic ( T
C
= 25
o
C unless otherwise specified )
Symbol Parameter Test conditions Min. Typ. Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage V
GS
=0V, I
D
=250uA 650 V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D
=250uA, referenced to 25
o
C 0.6 V/
o
C
I
DSS
Drain to source leakage current
V
DS
=650V, V
GS
=0V 1 uA
V
DS
=520V, T
C
=125
o
C 50 uA
I
GSS
Gate to source leakage current, forward V
GS
=30V, V
DS
=0V 100 nA
Gate to source leakage current, reverse V
GS
=-30V, V
DS
=0V -100 nA
On characteristics
V
GS(TH)
Gate threshold voltage V
DS
=V
GS
, I
D
=250uA 2.5 4.5 V
R
DS(ON)
Drain to source on state resistance V
GS
=10V, I
D
=2A 1.95 2.6
G
fs
Forward transconductance V
DS
=30V, I
D
=2A 3.1 S
Dynamic characteristics
C
iss
Input capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
554
pF C
oss
Output capacitance 70
C
rss
Reverse transfer capacitance 17
t
d(on)
Turn on delay time
V
DS
=325V, I
D
=4A, R
G
=25��,
V
GS
=10V
(note 4,5)
11
ns
t
r
Rising time 27
t
d(off)
Turn off delay time 39
t
f
Fall time 27
Q
g
Total gate charge
V
DS
=520V, V
GS
=10V, I
D
=4A
(note 4,5)
17
nC Q
gs
Gate-source charge 3.5
Q
gd
Gate-drain charge 8.5
Source to drain diode ratings characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
4 A
I
SM
Pulsed source current 16 A
V
SD
Diode forward voltage drop. I
S
=4A, V
GS
=0V 1.4 V
t
rr
Reverse recovery time
I
S
=4A, V
GS
=0V,
dI
F
/dt=100A/us
380 ns
Q
rr
Reverse recovery charge 2.02 uC
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L =22.8mH, I
AS
=4A, V
DD
=50V, R
G
=25Ω, Starting T
J
= 25
o
C
3. I
SD
≤4A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5. Essentially independent of operating temperature.