Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Aug. 2018. Rev. 2.0 1/6
SW4N65TA
Features
High ruggedness
Low R
DS(ON)
(Typ 2.1 Ω)@V
GS
=10V
Low Gate Charge (Typ 13nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: LED, TV-Power, Charger
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-252 TO-251N
V
DSS
Drain to source voltage 650 V
I
D
Continuous drain current (@T
C
=25
o
C) 4* A
Continuous drain current (@T
C
=100
o
C) 2.5* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 80 mJ
E
AR
Repetitive avalanche energy (note 1) 6 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 113.6 W
Derating factor above 25
o
C 0.9 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-252 TO-251N
R
thjc
Thermal resistance, Junction to case 1.1
o
C/W
R
thja
Thermal resistance, Junction to ambient 90
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW D 4N65TA
SW4N65TA TO-252 REEL
2 SW N 4N65TA
SW4N65TA TO-251N TUBE
N-channel Enhanced mode TO-252/TO-251N MOSFET
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 650V
I
D
: 4A
R
DS(ON)
: 2.1Ω
1
2
3
TO-252
1
2
3
TO-251N
1
2
3
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Aug. 2018. Rev. 2.0 2/6
SW4N65TA
Electrical characteristic ( T
C
= 25
o
C unless otherwise specified )
Symbol Parameter Test conditions Min. Typ. Max. Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage V
GS
=0V, I
D
=250uA 650 V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D
=250uA, referenced to 25
o
C 0.6 V/
o
C
I
DSS
Drain to source leakage current
V
DS
=650V, V
GS
=0V 1 uA
V
DS
=520V, T
C
=125
o
C 50 uA
I
GSS
Gate to source leakage current, forward V
GS
=30V, V
DS
=0V 100 nA
Gate to source leakage current, reverse V
GS
=-30V, V
DS
=0V -100 nA
On characteristics
V
GS(TH)
Gate threshold voltage V
DS
=V
GS
, I
D
=250uA 2 4 V
R
DS(ON)
Drain to source on state resistance
V
GS
=10V, I
D
=2A,T
j
=25
o
C 2.1 2.6
Ω
V
GS
=10V, I
D
=2A,T
j
=125
o
C 4.3
G
fs
Forward transconductance V
DS
=30V, I
D
=2A 5.3 S
Dynamic characteristics
C
iss
Input capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
556
pF C
oss
Output capacitance 64
C
rss
Reverse transfer capacitance 5.4
t
d(on)
Turn on delay time
V
DS
=325V, I
D
=4A, R
G
=10Ω,
V
GS
=10V
(note 4,5)
9.5
ns
t
r
Rising time 21
t
d(off)
Turn off delay time 24
t
f
Fall time 23
Q
g
Total gate charge
V
DS
=520V, V
GS
=10V, I
D
=4A ,
I
g
=10mA
(note 4,5)
13
nC Q
gs
Gate-source charge 3.5
Q
gd
Gate-drain charge 5
R
g
Gate resistance V
DS
=0V, Scan F mode 3.3 Ω
Source to drain diode ratings characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
4 A
I
SM
Pulsed source current 16 A
V
SD
Diode forward voltage drop. I
S
=4A, V
GS
=0V 1.4 V
t
rr
Reverse recovery time
I
S
=4A, V
GS
=0V,
dI
F
/dt=100A/us
390 ns
Q
rr
Reverse recovery charge 1.5 uC
※. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L =10mH, IAS =4A, VDD=100V, RG=25Ω, Starting T
J
= 25
o
C
3. I
SD
≤4A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5. Essentially independent of operating temperature.