Rev. date: 28-MAR-12 KSD-T0A074-000 www.auk.co.kr
1
of 6
2N7000K
N-Channel Enhancement Mode MOSFET
High Speed Switching Application
Features
ESD rating: 1000V (HBM)
Low On-Resistance: R
DS(on)
< 3Ω @ V
GS
= 10V
High power and current handling capability
Very fast switching
Halogen free and RoHS compliant device
Applications
High speed line driver
Ordering Information
Part Number Marking Code Package Packaging
2N7000K 2N7000K TO-92 Tape
Marking Information
Absolute Maximum Ratings (T
amb
=25℃, Unless otherwise specified)
Characteristic Symbol Ratings Unit
Drain-Source voltage V
DS
60 V
Gate-Source voltage V
GS
20
V
Maximum drain current
(Note 1)
I
D
500 mA
Pulsed drain current
(Note 1)
I
DP
2 A
Power dissipation
(Note 2)
P
D
625 mW
Operating junction temperature T
j
150
C
Storage temperature range T
stg
-55 ~ 150
C
Thermal resistance junction to ambient
(Note 2)
R
th(j-a)
400
C/W
Note 1)
Limited only maximum junctio n temperature
Note 2)
Device mounted on FR-4 board with recommended pad layout.
Column 1,2 : Device Code
Column 3 : Production Information
e.g.) YWW
-. YWW : Date Code(year,week)
S G D
TO-92
2N
7000K
YWW
Rev. date: 28-MAR-12 KSD-T0A074-000 www.auk.co.kr
2
of 6
Electrical Characteristics (T
amb
=25℃, Unless otherwise specified)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Drian-Source breakdown voltage BV
DSS
I
D
=250A, V
GS
=0
60 - - V
Gate-Source breakdown voltage BV
GSS
I
G
=250A, V
DS
=0
±20 - - V
Gate-Threshold voltage V
GS(th)
I
D
=250uA, V
DS
=V
GS
1 - 2.5 V
Zero Gate voltage drain current I
DSS
V
DS
=60V, V
GS
=0 - - 1
A
Gate-body leakage I
GSS
V
GS
=20V, V
DS
=0V
- -
10 A
Drain-Source on-resi stance
(Note 3)
R
DS(ON)
V
GS
=10V, I
D
=0.5A - - 3
V
GS
=5V, I
D
=0.05A - - 3.5
Forward trans-conductance
(Note 3)
g
fs
V
DS
=10V, I
D
=0.2A 0.08 - - S
Input capacitance C
iss
V
DS
=25V, V
GS
=0,
f=1MHz
- 30 50
pF Output capacitance C
oss
- 7 -
Reverse T ransfer capacitance C
rss
- 4 -
Turn-on delay time
(Note 3, 4)
t
d(on)
V
DD
=30V, I
D
=0.2A,
V
GS
=10V, R
G
=10
- 2 -
ns
Rise time
(Note 3, 4)
t
r
- 15 -
Turn-off delay time
(Note 3, 4)
t
d(off)
-- 8 -
Fall time
(Note 3, 4)
t
f
- 11 -
Total gate charge
(Note 3, 4)
Q
g
V
DS
=10V, I
D
=0.25A,
V
GS
=4.5V
- 0.6 0.8
nC Gate-Source charge
(Note 3, 4)
Q
gs
- 0.2 -
Gate-Drain charge
(Note 3, 4)
Q
gd
- 0.2 -
Diode forward voltage
(Note 3)
V
SD
V
GS
=0V, I
S
=0.2A - - 1.3 V
Note 3)
Pulse test: Pulse width≤300us, Duty cycle≤2%
Note 4)
Essentially independent of operating temperature typical char acteristics.
2N7000
K