N-CHANNEL POWER MOSFET
DESCRIPTION
Thinkisemi 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
FEATURES
* R
DS(ON)
= 23m@V
GS
= 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
SYMBOL
1.Gate
3.Source
2.Drain
TO-251/IPAK
U55NF06 TO-251/IPAK
P55NF06 TO-220
D55NF06 TO-252/DPAK
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
±20 V
T
C
= 25°C 50 A
Continuous Drain Current
T
C
= 100°C
I
D
35 A
Pulsed Drain Current (Note 2) I
DM
200 A
Single Pulsed (Note 3) E
AS
480 mJ
Avalanche Energy
Repetitive (Note 2) E
AR
13 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 7 V/ns
TO-220 120 W
90
Power Dissipation (T
C
=25°C)
TO-252
P
D
136 W
Junction Temperature T
J
+150 °C
Operation and Storage Temperature T
STG
-55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by T
J
3. L=0.38mH, I
AS
=50A, V
DD
=25V, R
G
=20, Starting T
J
=25°C
4. I
SD
50A, di/dt300A/s, V
DD
BV
DSS
, Starting T
J
=25°C
APPLICATION
Networking DC-DC Power System
Auotmobile Convert System
Power Supply etc..
TO-251
W
2
3
2
3
1
2
3
1
TO-220/TO-220F
F55NF06 TO-220F
TO-252/DPAK
1
®
55NF06
Pb Free Plating Product
55NF06
N-CHANNEL POWER MOSFET TRANSISTOR
Pb
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Page 1/6
50 AMPERE 60 VOLT
THERMAL DATA
PARAMETER SYMBOL RATING UNIT
TO-220 62 °C/W
TO-251
Junction to Ambient
TO-252
JA
100 °C/W
TO-220 1.24 °C/W
1.28
Junction to Case
TO-252
JC
1.1 °C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
V
GS
= 0 V, I
D
= 250 A 60 V
Drain-Source Leakage Current I
DSS
V
DS
= 60 V, V
GS
= 0 V 10 A
Forward V
GS
= 20V, V
DS
= 0 V 100 nA
Gate-Source Leakage Current
Reverse
I
GSS
V
GS
= -20V, V
DS
= 0 V -100 nA
Breakdown Voltage Temperature
Coefficient
BVϦ
DSS
/ƸT
J
I
D
= 250 A,
Referenced to 25°C
0.07 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(TH)
V
DS
= V
GS
, I
D
= 250 A 2.0 4.0 V
Static Drain-Source On-State Resistance R
DS(ON)
V
GS
= 10 V, I
D
= 25 A 18 23 m
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS
900 1220 pF
Output Capacitance C
OSS
430 550 pF
Reverse Transfer Capacitance C
RSS
V
GS
= 0 V, V
DS
= 25 V
f = 1MHz
80 100 pF
ELECTRICAL CHARACTERISTICS(Cont.)
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
D(ON)
40 60 ns
Turn-On Rise Time t
R
100 200 ns
Turn-Off Delay Time t
D(OFF)
90 180 ns
Turn-Off Fall Time t
F
V
DD
= 30V, I
D
=25 A,
R
G
= 50 (Note 1, 2)
80 160 ns
Total Gate Charge Q
G
30 40 nC
Gate-Source Charge Q
GS
9.6 nC
Gate-Drain Charge Q
GD
V
DS
= 48V, V
GS
= 10 V
I
D
= 50A (Note 1, 2)
10 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND
ʳ
MAXIMUM RATINGS
Drain-Source Diode Forward Voltage V
SD
I
S
= 50A, V
GS
= 0 V 1.5 V
Maximum Continuous Drain-Source Diode
Forward Current
I
S
50 A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
200 A
Reverse Recovery Time t
RR
54 ns
Reverse Recovery Charge Q
RR
I
S
= 50A, V
GS
= 0 V
dI
F
/ dt = 100 A/s
81 C
Notes: 1. Pulse Test: Pulse Width300s, Duty Cycle2%
2. Essentially independent of operating temperature
°C/W 62
°C/W
TO-251
®
55NF06
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Page 2/6