Production specification

Silicon Epitaxial Planar Transistor SS8050W

F061 www.gmesemi.com

Rev.A 1

FEATURES

 Collector Current.(I

C

= 1.5A）

 Complementary To SS8550W.

 Collector dissipation:P

C

=200mW(T

C

=25℃)

APPLICATIONS

 High Collector Current.

SOT-323

ORDERING INFORMATION

Type No. Marking Package Code

SS8050W Y1 SOT-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol Parameter Ratings Units

V

CBO

Collector-Base Voltage

40 V

V

CEO

Collector-Emitter Voltage

25 V

V

EBO

Emitter-Base Voltage

6 V

I

C

Collector Current -Continuous

1.5 A

P

C

Collector Dissipation

200 mW

T

j,

T

stg

Junction and Storage Temperature

-55 to +150 ℃

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified

Parameter Symbol Test conditions MIN

MAX UNIT

Collector-base breakdown voltage

V

(BR)CBO

I

C

=100μA,I

E

=0 40 V

Collector-emitter breakdown voltage

V

(BR)CEO

I

C

=2mA,I

B

=0 25 V

Emitter-base breakdown voltage V

(BR)EBO

I

E

=-100μA,I

C

=0 5

V

Collector cut-off current

I

CBO

V

CB

=40V,I

E

=0 0.1 μA

Collector cut-off current

I

CEO

V

CE

=20V,I

B

=0 0.1 μA

Emitter cut-off current

I

EBO

V

EB

=5V,I

C

=0 0.1 μA

Pb

Lead-free

Production specification

Silicon Epitaxial Planar Transistor SS8050W

F061 www.gmesemi.com

Rev.A 2

Parameter Symbol Test conditions MIN

MAX UNIT

DC current gain

h

FE

V

CE

=1V,I

C

=100mA 120 400

V

CE

=1V,I

C

=800mA

40

Collector-emitter saturation voltage

V

CE(sat)

I

C

=800 mA, I

B

= 80mA

0.5 V

Base-emitter saturation voltage

V

BE(sat)

I

C

=800 mA, I

B

= 80mA

1.2 V

Base-emitter voltage

V

BE

V

CE

=1V I

C

=10mA

1 V

Transition frequency

f

T

V

CE

=10V, I

C

= 50mA

f=30MHz

100 MHz

CLASSIFICATION OF h

FE(1)

Rank L H J

Range 120-200 200-350 300-400

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified