GESD3V3L5UV
TVM0048A www.gmesemi.com
1
5-Fold ESD Protection Diode Arrays
Features
Uni-directional ESD Protection of Up to Five Lines.
Bi-directional ESD Protection of Up to Four Lines.
Low Reverse Stand−off Voltage: 3.3V.
Very Low Leakage Current: 300 nA Max.
Fast Response Time.
RoHS Compliant.
Typical Applications
Computers and Peripherals.
�� Portable Electronics.
Cellular Handsets and Accessories.
Communications Systems.
Audio and Video Equipment.
Mechanical Data
Case: SOT-563.
Molding Compound, UL Flammability Classification Rating 94V-0.
Terminals: Tin Plated Leads, Solderable Per MIL-STD-202, Method
208.
GESD3V3L5UV
SOT-563
Ordering Information
Part Number Package Shipping Marking Code
GESD3V3L5UV□ SOT-563
3000/Tape Reel
.E1
□: none is for Lead Free package;
“G” is for Halogen Free package.
Maximum Ratings
(@T
A
=25℃ unless otherwise specified)
Characteristic Symbol Value Units
Peak Pulse Voltage
IEC 61000-4-2 Contact Discharge
MIL STD883G-Method 3015-7
V
PP
20
10
kV
Thermal Characteristics
Parameter Symbol Value Units
Lead solder temperature (10 seconds duration) T
L
260
℃
Junction temperature T
J
150
℃
Storage temperature range T
STG
-55 to+150
℃
Pb
Lead-free
GESD3V3L5UV
TVM0048A www.gmesemi.com
2
5-Fold ESD Protection Diode Arrays
Electrical Characteristics
(@T
A
=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min. Typ. Max. Units
Reverse stand-off voltage V
RWM
- - 3.3 V
Reverse breakdown voltage V
BR
I
R
=1mA 5.3 - 5.9 V
Reverse leakage current
(Note1)
I
R
V
RWM
=3.3V - - 300 nA
Forward voltage V
F
I
F
=10mA - - 0.9 V
Clamping voltage V
C
I
PP
=1A, tp=8/20us
I
PP
=2.5A, tp=8/20us
- -
10
12
V
Junction capacitance C
J
V
R
=0V,f=1MHZ - 10 20 pF
Differential resistance r
diff
I
R
=1mA - - 200 Ω
Note1: Short duration pulse test used to minimize self-heating effect.
Ratings and Characterstic Curves
(T
A
=25℃ unless otherwise noted)
Fig1. 8/20us pulse waveform according to
IEC61000-4-5
Fig3.IPP VS VC Cure
Fig2. ESD pulse waveform according to
IEC61000-4-2