Schottky Barrier Rectifiers SS32BF--SS34BF
SBF412AA www.gmesemi.com
Rev.B
Production specificat io n
Features
Metal silicon junction, ma j or it y carrier conduction
High surge capability
High temp er at ur e soldering guar anteed:
260°C/10 seconds
High curre nt capability, low forward v olt age dr op
Guarding for over voltage protection
RoHS Compliant
Mechanical Data
Case: SMBF molded plastic
Molding compound, UL f la m m ability classif icat i on r ating 94V-0
Termina ls: M at t e t in pl at ed leads, solder able perJ-STD-002 and JESD22-B102
Polarity : Col or band denotes cat hode end
Maximum Ratings (@T
A
= 25°C unless otherwise specified)
Characteristic Symbol SS32BF SS33BF SS34BF Units
Peak repetitive reverse voltage V
RRM
20 30 40 V
RMS reverse voltage V
RMS
14 21 28 V
DC blocking voltage V
DC
20 30 40 V
Maximum average forward output current I
F(AV)
3.0 A
Peak forward surge current,
8.3ms single half-sine-wave
I
FSM
80 A
Thermal Characteristics
Note:
1. Device mounted on PCB with 10 mm x 20 mm x 0.1mm copper pad areas
Parameter Symbol SS32BF SS33BF SS34BF Units
Typical thermal resistance
(Note
1)
R
ΘJA
R
ΘJC
R
ΘJL
65
°C /W
16
15
Operating junction temperature range T
J
- 55 ---- + 125 °C
Storage temperature range T
STG
- 55 ---- + 150 °C
Schottky Barrier Rectifiers SS32BF--SS34BF
SBF412AA www.gmesemi.com
Rev.B
Production specificat io n
Electrical Characteristics (@T
A
= 25°C unless other wise speci fi ed)
Parameter Symbol Test conditions Typ. Max. Units
Maximum instantaneous
forward voltage(Note 1)
V
F
I
F
=3.0A @T
A
=25°C -- 0.5 V
Maximum Reverse current
(Note 2)
I
R
Rated V
R
,
@T
J
=25°C -- 500
μ A
@T
J
=100°C -- 20 m A
Note:
1.Pulse test: 300us pulse width, 1 % duty cycle
2.Pulse test: Pulse width 40ms