Product specification
Schottky Barrier Rectifier MBR20150CT, MBR20200CT
SKM0002A
www.gmesemi.com
1
FEATURES
Metal-Semicondutcor Junction With Guard Ring.
Epitaxial Construction.
Low Forward Voltage Drop,Low Switching Losses.
High Surge Capacity.
For Use in Low Voltage,High Frequency Inverters Free
Wheeling,and Polarity Protection Applications.
TO-220AB
Ordering Information
Part Number Package Shipping Marking Code
MBR20150CT□ TO-220AB 50/Tube MBR20150CT
MBR20200CT□ TO-220AB 50/Tube MBR20200CT
□: none is for Lead Free package;
“G” is for Halogen Free package.
MAXIMUM RATING
operating temperature range applies unless otherwise specified
Symbol
Parameter
MBR20150CT MBR20200CT
Unit
V
RRM
Recurrent Peak Reverse Voltage
150 200 V
V
RMS
RMS Reverse Voltage
105 140 V
V
DC
DC Blocking Voltage
150 200 V
I
(AV)
Average Forward Total Device Rectified Current
@T
A
=100℃
20 A
I
FSM
Peak Forward Surge Current 8.3ms Single Half
Sine-wave Superimosed on Rated Load
150 A
R
θ
JC
Typical Thermal Resistance Junction to Case
3 ℃/W
T
j
T
stg
Operating Junction and StorageTem-perature
Range
-55 to +150 ℃
Pb
Lead-free
Product specification
Schottky Barrier Rectifier MBR20150CT, MBR20200CT
SKM0002A
www.gmesemi.com
2
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter Symbol
Test conditions
MBR20150CT MBR20200CT
UNIT
TYP MAX TYP MAX
Reverse Current I
R(note1)
V
R
=V
RRM
,T
A
=25
℃
0.05 0.05
mA
V
R
=V
RRM
,T
A
=125
℃
10 10
Forward Voltage V
F(note2)
I
F
=10A ,T
A
=25
℃
0.8 0.89 0.81 0.90
V
I
F
=10A ,T
A
=125
℃
0.75 0.75
NOTTE1: Pulse test:pulse width≤5ms,duty cycle≤2.0%
NOTTE2: Pulse test:pulse width=380µs,duty cycle≤2.0%.
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified