GESD3V3S1B3
TVM0044A www.gmesemi.com
1
LOW CAPACITANCE BIDIRECTIONAL TVS Diode
Features
Transient protection for data&power lines to
IEC 61000-4-2(ESD)30Kv(air),30kV(contanct)
Working Voltage: 3.3V
.
Low clamping voltage
.
Low leakage current.
Typical Applications
Power lines.
Cellular handsets.
Tablets.
Microprocessors.
Portable Electronics.
Mechanical Data
Case: SOD-323.
Molding compound, UL flammability classification rating
94V-0.
Terminals: Tin plated leads, solderable per MIL-STD-202,
Method 208.
GESD3V3S1B3
SOD-323
Ordering Information
Part Number Package Shipping Marking Code
GESD3V3S1B3□ SOD-323
3000/Tape Reel
RH
□: none is for Lead Free package;
“G” is for Halogen Free package.
Maximum Ratings
(@T
A
=25℃ unless otherwise specified)
Characteristic Symbol Value Units
Peak pulse power (tp = 8/20μs) P
PK
50 W
Peak pulse current (tp = 8/20μs) I
PP
5 A
Reverse Stand-off Voltage V
RWM
3.3 V
ESD according to IEC61000-4-2 air discharge
V
ESD
±30
KV
ESD according to IEC61000-4-2 contact discharge ±30
Pb
Lead-free
GESD3V3S1B3
TVM0044A www.gmesemi.com
2
LOW CAPACITANCE BIDIRECTIONAL TVS Diode
Thermal Characteristics
Electrical Characteristics
(@T
A
=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min. Typ. Max. Units
Reverse breakdown voltage V
BR
I
R
=1mA 3.8 - 6.5 V
Reverse leakage current
(Note1)
I
R
V
RWM
=3.3V - - 1 uA
Clamping voltage V
C
I
PP
=5A, tp=8/20us - 7 15 V
Junction capacitance C
J
V
R
=0V,f=1MHZ - 7 13 pF
Note1: Short duration pulse test used to minimize self-heating effect.
Ratings and Characterstic Curves
(T
A
=25℃ unless otherwise noted)
Fig1. 8/20us pulse waveform according to
IEC61000-4-5
Fig2. ESD pulse waveform according to
IEC61000-4-2
Parameter Symbol Value Units
Junction temperature T
J
150
℃
Storage temperature range T
STG
-55 to+150 ℃