Production specification
PNP
Silicon Epitaxial Planar Transistor 2SA1576A
F029
www.gmesemi.com
Rev.A 1
FEATURES
Power dissipation.(P
C
=200mW)
Excellent H
FE
Linearity.
Complements the 2SC4081.
APPLICATIONS
General purpose application.
Switching and amplification.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
2SA1576A FQ/FR/FS SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
-60 V
V
CEO
Collector-Emitter Voltage
-50 V
V
EBO
Emitter-Base Voltage
-6 V
I
C
Collector Current -Continuous
-150 mA
P
C
Collector Dissipation
200 mW
T
stg
Storage Temperature
-55 to +150 ℃
T
j,
Junction Temperature
150 ℃
Pb
Lead-free
Production specification
PNP
Silicon Epitaxial Planar Transistor 2SA1576A
F029
www.gmesemi.com
Rev.A 2
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX
UNIT
Collector-base breakdown voltage V
(BR)CBO
I
C
=-50μA,I
E
=0 -60 V
Collector-emitter breakdown
voltage
V
(BR)CEO
I
C
=-1mA,I
B
=0 -50 V
Emitter-base breakdown voltage V
(BR)EBO
I
E
=-50μA,I
C
=0 -6 V
Collector cut-off current I
CBO
V
CB
=-60V,I
E
=0 -0.1 μA
Emitter cut-off current I
EBO
V
EB
=-6V,I
C
=0 -0.1 μA
DC current gain h
FE
V
CE
=-6V,I
C
=-1mA 120 560
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-50mA, I
B
=-5mA -0.5 V
Transition frequency f
T
V
CE
=-12V, I
C
= -2mA
f=30MHz
140 MHz
Collector output capacitance C
ob
V
CB
=-12V,I
E
=0,f=1MHz 4 5 pF
CLASSIFICANTION OF h
FE
Rank Q R S
Range 120-270 180-390 270-560
marking FQ FR FS