I
NTEGRATED
C
IRCUITS
D
IVISION
www.ixysic.com
DS-CPC5603-R08
1
CPC5603
N-Channel Depletion Mode FET
Applications
Features
Description
Ordering Information
Package Pinout
Pin Number Name
1GATE
2 DRAIN
3 SOURCE
4 DRAIN
• Support Component for LITELINK™
Data Access Arrangement (DAA)
• Telecom
• Normally-On Switches
• Ignition Modules
• Converters
• Security
• Power Supplies
• 415V Drain-to-Source Voltage
• Depletion Mode Device Offers Low R
DS(on)
at Cold Temperatures
• Low On-Resistance: 8 (Typical) @ 25°C
• Low V
GS(off)
Voltage: -2.0V to -3.6V
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
The CPC5603 is an N-channel, depletion mode Field
Effect Transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third generation process realizes
world class, high voltage MOSFET performance in an
economical silicon gate process. The vertical DMOS
process yields a highly reliable device particularly
in difficult application environments such as
telecommunications, security, and power supplies.
One of the primary applications for the CPC5603 is
as a linear regulator/hook switch for the LITELINK™
family of
Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5603 has a typical on-resistance of 8, a
drain-to-source voltage of 415V and is available in
the SOT-223 package. As with all MOS devices, the
FET structure prevents thermal runaway and
thermal-induced secondary breakdown.
Parameter Rating Units
Drain-to-Source Voltage - V
DS
415 V
Max On-Resistance - R
DS(on)
14
Max Power 2.5 W
D
G D S
4
1 2 3
Part # Description
CPC5603CTR N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/Reel)
I
NTEGRATED
C
IRCUITS
D
IVISION
www.ixysic.com
2
R08
CPC5603
Electrical Characteristics @25
o
C (Unless Otherwise Specified)
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Absolute Maximum Ratings @ 25°C
Thermal Characteristics
Parameter Symbol Conditions Min Typ Max Units
Gate-to-Source Off Voltage V
GS(off)
I
D
= 2µA, V
DS
=10V, V
DS
=100V -2 -3.6 V
Drain-to-Source Leakage Current I
DS(off)
V
GS
= -5V, V
DS
=250V - - 20 nA
V
GS
= -5V, V
DS
=415V - - 1 A
Drain Current I
D
V
GS
= -2.7V, V
DS
=5V, V
DS
=50V - - 5 mA
V
GS
= -0.57V, V
DS
=5V 130 - - mA
On Resistance R
DS(on)
V
GS
= -0.35V, I
DS
=50mA - 8 14
Gate Leakage Current I
GSS
V
GS
=10V, V
GS
=-10V - - 0.1 A
Gate Capacitance C
ISS
V
DS
= V
GS
=0V - - 300 pF
Parameter Symbol Ratings Units
Drain-to-Source Voltage V
DS
415 V
Gate-to-Source Voltage V
GS
±20 V
Total Package Dissipation P 2.5 W
Operational Temperature T
A
-40 to +85
o
C
Storage Temperature T
A
-40 to +125
o
C
Parameter Symbol Conditions Min Typ Max Units
Thermal Resistance R
JC
---14ºC/W