I
NTEGRATED
C
IRCUITS
D
IVISION
www.ixysic.com
DS-CPC3960-R02
1
CPC3960
600V N-Channel
Depletion-Mode FET
Part # Description
CPC3960ZTR SOT-223: Tape and Reel (1000/Reel)
BV
DSX
/
BV
DGX
R
DS(on)
(max)
I
DSS
(min) Package
600V 44 100mA SOT-223
Applications
Features
Description
Ordering Information
Circuit Symbol
• Current Regulator
• Normally-On Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply
• High Breakdown Voltage: 600V
• On-Resistance: 44 max. at 25ºC
• Low V
GS(off)
Voltage: -1.4 to -3.1V
• High Input Impedance
• Small Package Size: SOT-223
The CPC3960 is a 600V, N-channel, depletion-mode,
Field Effect Transistor (FET) created using IXYS
Integrated Circuits Division’s proprietary vertical DMOS
process. Yielding a robust device with high input
impedance, this process enables world class, high
voltage MOSFET performance with an economical
silicon gate architecture.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown, which makes the CPC3960 ideal for use
in high-power applications.
The CPC3960 is a highly reliable FET device that
has been used extensively in IXYS Integrated Circuits
Division’s Solid State Relays for industrial and
telecommunications applications.
The CPC3960 is available in the SOT-223 package.
D
S
G
Package Pinout
D
G
D S
4
1
23
I
NTEGRATED
C
IRCUITS
D
IVISION
www.ixysic.com
2
R02
CPC3960
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Absolute Maximum Ratings @ 25ºC
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter Ratings Units
Drain-to-Source Voltage 600 V
Gate-to-Source Voltage ±15 V
Pulsed Drain Current 150 mA
Total Package Dissipation
1
1.8 W
Operational Temperature -55 to +125 ºC
Junction Temperature, Maximum +125 ºC
Storage Temperature -55 to +125 ºC
1
Mounted on 1"x1" 2 oz. Copper FR4 board.
Parameter Symbol Conditions Min Typ Max Units
Drain-to-Source Breakdown Voltage BV
DSX
V
GS
= -5.5V, I
D
=100µA 600 - - V
Gate-to-Source Off Voltage V
GS(off)
V
DS
= 15V, I
D
=1A -1.4 - -3.1 V
Change in V
GS(off)
with Temperature dV
GS(off)
/dT V
DS
= 15V, I
D
=1A - - 4.5 mV/ºC
Gate Body Leakage Current I
GSS
V
GS
=±15V, V
DS
=0V - - 100 nA
Drain-to-Source Leakage Current I
D(off)
V
GS
= -5.5V, V
DS
=600V - - 1 µA
Saturated Drain-to-Source Current I
DSS
V
GS
= 0V, V
DS
=15V 100 - - mA
Static Drain-to-Source On-State Resistance R
DS(on)
V
GS
= 0V, I
D
=100mA, V
DS
=10V
--44
Change in R
DS(on)
with Temperature dR
DS(on)
/dT - - 2.5 %/ºC
Forward Transconductance G
fs
I
D
= 50mA, V
DS
= 10V 100 - - m
Input Capacitance C
ISS
V
GS
= -3.5V
V
DS
= 25V
f= 1MHz
-
100
-pF
Common Source Output Capacitance C
OSS
6.8
Reverse Transfer Capacitance C
RSS
4.2
Source-Drain Diode Voltage Drop V
SD
V
GS
= -5V, I
SD
=150mA - 0.72 1 V
Thermal Resistance
Junction to Ambient
JA
- - 55 -
ºC/W
Junction to Case
JC
- - 23 -