I
NTEGRATED
C
IRCUITS
D
IVISION
www.ixysic.com
DS-CPC3714-R02
1
CPC3714
350V N-Channel
Depletion-Mode FET
V
(BR)DSX
/
V
(BR)DGX
R
DS(on)
(max)
I
DSS
(min) Package
350V
P
14 240mA SOT-89
Applications
Features
Description
Ordering Information
Package Pinout
• Ignition Modules
• Normally-On Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply
• Offers Low R
DS(on)
at Cold Temperatures
• R
DS(on)
14 max. at 25ºC
• High Input Impedance
• High Breakdown Voltage: 350V
• Low V
GS(off)
Voltage: -1.6 to -3.9V
• Small Package Size: SOT-89
The CPC3714 is an N-channel, depletion-mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high power applications. The
CPC3714 is a highly reliable FET device that has
been used extensively in our solid state relays for
industrial and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3714 offers a low, 14 maximum, on-state
resistance at 25ºC.
The CPC3714 has a minimum breakdown voltage of
350V
P
and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
(SOT-89)
G
D
S
D
Circuit Symbol
S
G
D
Part # Description
CPC3714CTR N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
I
NTEGRATED
C
IRCUITS
D
IVISION
www.ixysic.com
2
R02
CPC3714
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Absolute Maximum Ratings @ 25 ºC
Electrical Characteristics @ 25 ºC (Unless Otherwise Noted)
Parameter Ratings Units
Drain-to-Source Voltage 350 V
P
Gate-to-Source Voltage ±15 V
P
Pulsed Drain Current 600 mA
Total Package Dissipation
1
1.4 W
Junction Temperature 150 ºC
Operational Temperature -55 to +125 ºC
Storage Temperature -55 to +125 ºC
1
Mounted on FR4 board 1"x1"x0.062"
Parameter Symbol Conditions Min Typ Max Units
Drain-to-Source Breakdown Voltage V
(BR)DSX
V
GS
= -5V, I
D
=100µA 350 - - V
P
Gate-to-Source Off Voltage V
GS(off)
I
DS
= 5V, I
D
=1mA -1.6 - -3.9 V
Change in V
GS(off)
with Temperatures dV
GS(off)
/dT V
DS
= 5V, I
D
=1mA - - 4.5 mV/ºC
Gate Body Leakage Current I
GSS
V
GS
=±15V, V
DS
=0V - - 100 nA
Drain-to-Source Leakage Current I
D(off)
V
GS
= -5V, V
DS
=350V - - 1 A
V
GS
= -5V, V
DS
=280V, T
A
=125ºC - - 1 mA
Saturated Drain-to-Source Current I
DSS
V
GS
= 0V, V
DS
=15V 240 - - mA
Static Drain-to-Source ON-State Resistance R
DS(on)
V
GS
= 0V, I
D
=240mA - - 14
Change in R
DS(on)
with Temperatures dR
DS(on)
/dT V
GS
= 0V, I
D
=240mA - - 1.1 %/ºC
Forward Transconductance G
FS
I
D
= 100mA, V
DS
= 10V 225 - - m
Input Capacitance C
ISS
V
GS
= -5V
V
DS
= 25V
f= 1MHz
-
45 100
pFCommon Source Output Capacitance C
OSS
10 60
Reverse Transfer Capacitance C
RSS
240
Turn-On Delay Time t
d(on)
V
DD
= 25V
I
D
= 150mA
V
GS
= 0V to -10V
R
gen
= 50
-
20
-ns
Rise Time t
r
10
Turn-Off Delay Time t
d(off)
20
Fall time t
f
50
Source-Drain Diode Voltage Drop V
SD
V
GS
= -5V, I
SD
= 150mA - 0.6 1.8 V
Thermal Resistance (Junction to Ambient) R
JA
- - 90 - ºC/W
90%
10%
90% 90%
10%10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
on
t
d(on)
t
off
t
d(off)
INPUT
INPUT
OUTPUT
0V
V
DS
R
gen
0V
-10V
t
f
t
r
Switching Waveform & Test Circuit