Production specification
Silicon Epitaxial Planar Diode 1N4148L
Q005 www.gmesemi.com
Rev.A 1
FEATURES
Fast Switching Speed:trr=4ns(Typ).
Surface Mount Package Ideally Suited For
Automatic Insertion.
For General Purpose Switching Applications.
High Conductance.
Available in Lead Free Version.
APPLICATIONS DFN1006-2
Surface mount fast switching diode.
ORDERING INFORMATION
Type No. Marking Package Code
1N4148L T4 DFN1006-2
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage V
R(RMS)
53 V
Forward Continuous Current I
FM
300 mA
Average Rectified Output Current I
o
150 mA
Non-Repetitive Peak Forward Surge Current @t=1.0 μs
@t=1.0 s
I
FSM
2.0
1.0
A
Power Dissipation P
d
200 mW
Thermal Resistance Junction to Ambient R
θJA
357 /W℃
Operating and Storage Temperature Rage T
j
,T
STG
-65 to +150 ℃
Pb
Lead-free
Production specification
Silicon Epitaxial Planar Diode 1N4148L
Q005 www.gmesemi.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic Symbol Test Condition Min Max Unit
Reverse Breakdown Voltage V
(BR)R
I
R
=10μA 75 - V
Forward Voltage V
F
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
0.715
0.855
1.0
1.25
V
Reverse Current I
R
V
R
=20V
V
R
=75V
25
1.0
nA
μA
Junction Capacitance C
J
V
R
=0,f=1.0MHz 2.0 pF
Reverse Recovery Time t
rr
I
F
=I
R
=10mA,
I
rr
=0.1×I
R
,R
L
=100Ω
- 4.0 ns
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified