Production specification
Silicon Epitaxial Planar Transistor S9014W
F059
www.gmesemi.com
Rev.A 1
FEATURES
Complementary To S9015W.
Excellent H
FE
Linearity.
Power dissipation.(P
C
=0.2W)
APPLICATIONS
Per-Amplifier low level & low noise.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
S9014W J6 SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
50 V
V
CEO
Collector-Emitter Voltage
45 V
V
EBO
Emitter-Base Voltage
5 V
I
C
Collector Current -Continuous
100 mA
P
C
Collector Dissipation
200 mW
T
j,
T
stg
Junction and Storage Temperature
-55 to +150 ℃
Pb
Lead-free
Production specification
Silicon Epitaxial Planar Transistor S9014W
F059
www.gmesemi.com
Rev.A 2
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
TYP MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
=100μA,I
E
=0 50 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=0.1mA,I
B
=0 45 V
Emitter-base breakdown voltage V
(BR)EBO
I
E
=-100μA,I
C
=0 5
V
Collector cut-off current
I
CBO
V
CB
=50V,I
E
=0 0.1 μA
Collector cut-off current
I
CEO
V
CE
=35V,I
B
=0 0.1 μA
Emitter cut-off current
I
EBO
V
EB
=3V,I
C
=0 0.1 μA
DC current gain
h
FE
V
CE
=5V,I
C
=1mA 200 1000
Collector-emitter saturation voltage
V
CE(sat)
I
C
=100mA, I
B
= 5mA
0.3 V
Base-emitter saturation voltage
V
BE(sat)
I
C
=100mA, I
B
= 5mA
1 V
Transition frequency
f
T
V
CE
=6V, I
C
= 20mA
f=30MHz
150 MHz
CLASSIFICATION OF h
FE(1)
Rank L H
Range 200-450 450-1000