Product specification
Single Line TVS Diode
GESD5V0X1DL
TVM0047A
www.gmesemi.com
1
FEATURES
Low diode capacitance:C
d
=0.50pF.
AEC-Q101 qualified.
Very low leakage current:I
PPM
=5A ;IEC61643-321.
ESD protection up to 10Kv; IEC61000-4-2.
APPLICATIONS
High-speed data lines. DFN1006-2
Portable electronics.
Communication systems.
Computers and peripherals.
ORDERING INFORMATION
Type No. Marking Package Code
GESD5V0X1DL
□
AE DFN1006-2
□: none is for Lead Free package;
“G” is for Halogen Free package.
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter Symbol
Limits Unit
Electrostatic discharge voltage
IEC61000-4-2(contact discharge)
（
air discharge)
V
ESD
10
15
kV
Electrostatic discharge voltage Machine Model
Human Body Model
400
10
V
kV
Reverse standoff voltage V
RWM
5
V
Peak pulse current t
p
=8/20us I
PP
5 A
Junction temperature T
j
150
℃
Ambient temperature T
amb
-65 to +150
℃
Storage temperature T
stg
-55 to +150
℃
Pb
Lead-free
Product specification
Single Line TVS Diode
GESD5V0X1DL
TVM0047A
www.gmesemi.com
2
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter Symbol Conditions Min Typ Max Units
Reverse breakdown voltage V
BR
I
R
=10mA 7 8.8 10 V
Reverse leakage current I
R
V
RWM
=5V - - 1 uA
Diode capacitance C
d
V
R
=0V,f=1MHz - 0.5 1 pF
Clamping voltage(Note) V
C
I
PP
=1A
I
PP
=2A
- -
13
14
V
Dynamic resistance R
dyn
I
R
=10A - 0.9 Ω
Note:Non-repetitive current pulse 8/20us exponenial decay waveform according to IEC6100-4-5.
Measured from pin 1 to pin 2.
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified