
 ���





Cathode mark
カソードマーク
Type No.
品名略号
5.0
2.0
2.5
①
②
K6
00
Date code
ロット記号（例）
① ②












 
 



���


 
 















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





���








 















���






順方向特性
Forward Voltage
Forward Current IF 〔A〕
０.１
５
１
０ ０.４
２.８
１.２ １.６ ２ ２.４０.８
Forward Voltage VF 〔V〕
せん頭サージ順電流耐量
Peak Surge Forward Current Capability
順電力損失曲線
Forward Power Dissipation
２
５
１５
５
２０
１
０
０
１ １００１０
Forward Power Dissipation PF 〔W〕
Average Rectified Forward Current IO 〔A〕 Number of Cycles 〔cycle〕
Peak Surge Forward Current IFSM 〔A〕
１cycle
IFSM
１０ms１０ms
Sine wave
Non-repetitive
Tj＝２５℃
DC
０．８
０．５
０
．３
０．２
０．１
S
IN
DC
０.８
０.５
０
.３
０.２
０.１
D＝０.０５D＝０.０５D＝０.０５
S
IN
接合容量
Junction Capacitance
Reverse Voltage VR 〔V〕
Junction Capacitance Cj 〔pF〕
１
００
１
１０
１
２００１００１０
０
０.２
０.４
１
.４
０.６
０.８
１
１
.２
０ ０.２ １.４０.４ ０.６ ０.８ １ １.２
１.５
０.５
��
０
f＝１MHz
Tl＝２５℃
TYP
Tj＝１５０℃
D＝tp/T
T
tp
０
I
O
D1FK60
ディレーティングカーブ
Ta-Io
Derating Curve Ta-Io
ディレーティングカーブ
Ta-Io
Derating Curve Ta-Io
Ambient Temperature Ta 〔℃〕 Ambient Temperature Ta 〔℃〕
Average Rectified Forward Current
IO 〔A〕
０
���０
４０ ６０ ８０ １００
１６０
１４０１２０
D＝tp/T
VR＝VRM
T
tp
０
０
IO
VR
０
０.２
１
０.４
０.６
０.８
Average Rectified Forward Current
IO 〔A〕
０
２０
４０ ６０ ８０ １００
１６０
１４０１２０
DC
D＝０．８
０．５
S
IN
０．３
０．２
０．１
DC
D＝０．８
０．５
S
IN
０．３
０．２
０．１
０．０５０．０５
D＝tp/T
VR＝VRM
T
tp
０
０
IO
VR
Tl＝１５０℃（MAX）
T
l＝１５０℃（TYP）
T
l＝ ２５℃（MAX）
T
l＝
２５℃（TYP）
P
ulse measurement
DC
D＝０．８
０．５
SIN
０．３
０．２
０．１
DC
D＝０．８
０．５
SIN
０．３
０．２
０．１
０．０５０．０５
O
n glass-epoxy substrate
Soldering land ２mm
Conductor layer ３５μm
O
n alumina substrate
Soldering land ２mm
Conductor layer ２０μm
Substrate thickness ０.６４mm
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