

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

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

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 



 

��













Cathode mark

カソードマーク

5.0

2.0

2.5

①

②

①②

Control No.

管理番号（例）

ロット記号（例）

Type No.

��名略号

Date code

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

 



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

 



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

��



 



































順方向特性

Forward Voltage

５

０．１

１

００．４０．８２２.４２．８１．６１.２

l＝１５０℃（MAX）

l＝１５０℃（TYP）

l＝２５℃（MAX）

l＝２５℃（TYP）

せん頭サージ順電流耐量

Peak Surge Forward Current Capability

順電力損失曲線

Forward Power Dissipation

４０

２０

１０

２５

３０

３５

１

５

０

１１００１０

１cycle

IFSM

１０ms１０ms

Sine wave

on-repetitive

Tj＝２５℃

０．８

０．５

０．３

０．２

０．１

D＝０．０５

０．８

０．５

０．３

０．２

０．１

D＝０．０５

接合容量

Junction Capacitance

０

０.５

１

１.５

２

０

０.４

０.２

０.６

０.８

１.２

１

＝１MHz

l＝２５℃

TYP

Tj＝１５０℃

D＝tp/T

０

Pulse measurement

ディレーティングカーブ

Ta-Io

Derating Curve Ta-Io

０

２０４０６０８０１００

１６０

１４０１２０

D＝０．８

０．５

SIN

０．３

０．２

０．１

０．０５

D＝０．８

０．５

SIN

０．３

０．２

０．１

０．０５

＝tp/T

R＝VRM

０

００.２０.４

０.８１１.２

１.６１.４０.６

１００

１

１０

１

４００

１００１０

０

０.４

０.２

０.６

０.８

１.６

１

.２

１.４

１

ディレーティングカーブ

Ta-Io

Derating Curve Ta-Io

０

２０４０６０８０１００

１６０

１４０

１２０

D＝０．８

０．５

SIN

０．３

０．２

０．１

０．０５

D＝０．８

０．５

SIN

０．３

０．２

０．１

０．０５

＝tp/T

R＝VRM

０

Forward Current IF 〔A〕

orward Voltage V

F 〔

V〕

Forward Power Dissipation PF 〔W〕

verage Rectiﬁed Forward Current I

O 〔

A〕 Number of Cycles 〔cycle〕

Peak Surge Forward Current IFSM 〔A〕

Reverse Voltage VR 〔V〕

Junction Capacitance Cj 〔pF〕

Ambient Temperature Ta 〔℃〕

Average Rectiﬁed Forward Current

IO 〔A〕

Ambient Temperature Ta 〔℃〕

Average Rectiﬁed Forward Current

IO 〔A〕

On glass-epoxy substrate

Soldering land ２mm

Conductor layer 35μm

On alumina substrate

Soldering land ２mm

Conductor layer 20μm

Substrate thickness 0.64





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