www.shindengen.co.jp/product/semi/
(
U180-p
〈
2016.02
〉)
■特性図 CHARACTERISTIC DIAGRAMS
80 90 110100 120 140130
せん頭サージ逆電流−クランピング電圧
Peak Surge Reverse Current I
RSM
vs Clamping Voltage V
CL
0.1
10
1
0.01
0.001
Peak Surge Reverse Current IRSM〔A〕
Clamping Voltage VCL〔V〕
T
l
=25℃
10/1000μs
TYP
−50 −25 0 25 50 75 100 125 150
VBR-Tj特性
Breakdown Voltage vs Junction Temperature
90
110
100
120
85
105
95
115
80
Breakdown Voltage VBR〔V〕
Junction Temperature Tj〔℃〕 Junction Temperature Tj〔℃〕
TYP
Pulse test
I
B
=1mA
0 25 7550 100 125
150
IR-Tj特性
Reverse Current vs Junction Temperature
1
100
1000
10
0.1
Reverse Current IR〔nA〕
TYP
Pulse test
V
R
=80V
せん頭サージ逆電流耐量
Peak Surge Reverse Current
0.01
0.1
1010.1
TYP
exponential wave
10
100
1
Pulse Width tp〔ms〕
Peak Surge Reverse Current IRSM〔A〕
IRSM
IRSM/2
tp
0
TYP
T
l
=25℃
OSC=20mV
V
R
=80V
10
50
5
Junction Capacitance
1100010010
Frequency f〔kHz〕
Junction Capacitance Cj〔pF〕
接合容量
TYP
T
l
=25℃
OSC=20mV
f =1000kHz
10
100
接合容量
Junction Capacitance
0.1 80101
Reverse Voltage VR〔V〕
Junction Capacitance Cj〔pF〕
過渡熱抵抗
Transient Thermal Impedance
10
100
0.001
0.01
1
0.1
10
-6
10
-5
10
-4
10
-2
10
-3
10
-1
10
0
10
1
10
3
10
2
Time t〔s〕
Trancient Thermal Impedance θja,θjl〔℃/W〕
θjlθjl
θja
θja
On glass-epoxy substrate : t=1mm
soldering land : 2.0×2.0(mm)
Cu layar : 35μm
T
l-
sensing point
ST02-100F1
*Sinewaveは50Hzで測定しています。
*50Hzsinewaveisusedformeasurements.