CYStech Electronics Corp.
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2018.10.24
Page No. : 1/ 8
MTP1013S3
CYStek Product Specification
-20V P-CHANNEL Enhancement Mode MOSFET
MTP1013S3
Features
•
Very low level gate drive requirements allowing direct operation in 3V circuits. V
GS(th)
<1.2V.
•
Compact industrial standard SOT-323 surface mount package.
•
ESD protected gate
•
Pb-free lead plating and halogen-free package.
Equivalent Circuit Outline
Ordering Information
Device
Package
Shipping
MTP1013S3-0-T1-G
SOT-323
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
MTP1013S3
SOT-323
G：Gate
S：Source
D：Drain
D
G
S
BVDSS
-20V
ID@ TA=25C, VGS=-4.5V
-540mA
RDSON@VGS=-4.5V, ID=-430mA
0.64Ω(typ)
RDSON@VGS=-4V, ID=-300mA
0.68Ω(typ)
RDSON@VGS=-2.5V, ID=-300mA
1.1Ω(typ)
RDSON@VGS=-1.8V, ID=-10mA
1.9Ω(typ)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
CYStech Electronics Corp.
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2018.10.24
Page No. : 2/ 8
MTP1013S3
CYStek Product Specification
Absolute Maximum Ratings (Tj=25C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±10
Continuous Drain Current @ TA=25C, VGS=-4.5V
ID
-0.54
A
Pulsed Drain Current (Note 1)
IDM
-1.5
Maximum Power Dissipation @ TA=25℃ (Note 2)
PD
350
mW
Thermal Resistance, Junction-to-Ambient
Rth,ja
357
C/W
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
C
Note : 1. Pulse width≤ 10μs, duty cycle≤2%.
2. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BV
DSS
-20
-
-
V
V
GS
=0V, I
D
=-250μA
V
GS(th)
-0.5
-
-1.2
V
V
DS
=V
GS
, I
D
=-250μA
G
FS
-
0.5
-
S
V
DS
=-10V, I
D
=-200mA
I
GSS
-
-
±
10
μA
V
GS
=
±
10V, V
DS
=0V
I
DSS
-
-
-1
V
DS
=-20V, V
GS
=0V
-
-
-10
V
DS
=-20V, V
GS
=0V, Tj=55
C
*R
DS(ON)
-
0.64
0.9
V
GS
=-4.5V, I
D
=-430mA
-
0.68
0.9
V
GS
=-4V, I
D
=-300mA
-
1.1
1.4
V
GS
=-2.5V, I
D
=-300mA
-
1.9
2.7
V
GS
=-1.8V, I
D
=-10mA
Dynamic
Ciss
-
59
-
pF
V
DS
=-10V, V
GS
=0V, f=1MHz
Coss
-
21
-
Crss
-
15
-
*t
d(ON)
-
5
-
ns
V
DS
=-6V, I
D
=-500mA, V
GS
=-4.5V,
R
G
=50
Ω
*t
r
-
6
-
*t
d(OFF)
-
42
-
*t
f
-
14
-
*Qg
-
1.2
-
nC
V
DS
=-5V, I
D
=-250mA, V
GS
=-4.5V
*Qgs
-
0.38
-
*Qgd
-
0.23
-
Source-Drain Diode
*I
S
-
-
-0.54
A
*I
SM
-
-
-1.5
*V
SD
-
-0.77
-1.2
V
V
GS
=0V, I
S
=-100mA
*Pulse Test : Pulse Width 300μs, Duty Cycle2%