SSM6L56FE
1
MOSFETs Silicon P-/N-Channel MOS
SSM6L56FE
SSM6L56FE
SSM6L56FE
SSM6L56FE
Start of commercial production
2019-05
1.
1.
1.
1. Applications
Applications
Applications
Applications
• High-Speed Switching
2.
2.
2.
2. Features
Features
Features
Features
(1) 1.5-V drive
(2) Low drain-source on-resistance
Q1 N-channel:
R
DS(ON)
= 235 mΩ (max) (@V
GS
= 4.5 V, I
D
= 800 mA)
R
DS(ON)
= 300 mΩ (max) (@V
GS
= 2.5 V, I
D
= 600 mA)
R
DS(ON)
= 480 mΩ (max) (@V
GS
= 1.8 V, I
D
= 200 mA)
R
DS(ON)
= 840 mΩ (max) (@V
GS
= 1.5 V, I
D
= 50 mA)
Q2 P-channel:
R
DS(ON)
= 390 mΩ (max) (@V
GS
= -4.5 V, I
D
= -800 mA)
R
DS(ON)
= 480 mΩ (max) (@V
GS
= -2.5 V, I
D
= -500 mA)
R
DS(ON)
= 660 mΩ (max) (@V
GS
= -1.8 V, I
D
= -200 mA)
R
DS(ON)
= 900 mΩ (max) (@V
GS
= -1.5 V, I
D
= -100 mA)
R
DS(ON)
= 4000 mΩ (max) (@V
GS
= -1.2 V, I
D
= -10 mA)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
ES6
1: Source 1
2: Gate 1
3: Drain 2
4: Source 2
5: Gate 2
6: Drain 1
2019-08-01
Rev.1.0
©2017-2019
Toshiba Electronic Devices & Storage Corporation
SSM6L56FE
2
4.
4.
4.
4. Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
4.1.
4.1.
4.1.
4.1. Q1 Absolute Maximum Ratings (Unless otherwise specified, T
Q1 Absolute Maximum Ratings (Unless otherwise specified, T
Q1 Absolute Maximum Ratings (Unless otherwise specified, T
Q1 Absolute Maximum Ratings (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
Rating
20
±8
800
1600
Unit
V
mA
Note 1: Ensure that the channel temperature does not exceed 150 .
4.2.
4.2.
4.2.
4.2. Q2 Absolute Maximum Ratings (Unless otherwise specified, T
Q2 Absolute Maximum Ratings (Unless otherwise specified, T
Q2 Absolute Maximum Ratings (Unless otherwise specified, T
Q2 Absolute Maximum Ratings (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
Rating
-20
±8
-800
-1600
Unit
V
mA
Note 1: Ensure that the channel temperature does not exceed 150 .
4.3.
4.3.
4.3.
4.3. Absolute Maximum Ratings (Unless otherwise specified, T
Absolute Maximum Ratings (Unless otherwise specified, T
Absolute Maximum Ratings (Unless otherwise specified, T
Absolute Maximum Ratings (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
(Q1, Q2 Common)
(Q1, Q2 Common)
(Q1, Q2 Common)
(Q1, Q2 Common)
Characteristics
Power dissipation
Power dissipation
Channel temperature
Storage temperature
(Note 1)
(Note 2)
Symbol
P
D
T
ch
T
stg
Rating
150
250
150
-55 to 150
Unit
mW
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device mounted on an FR4 board.(total rating)
(25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.135 mm
2
× 6)
Note 2: Device mounted on an FR4 board.(total rating)
(25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm
2
)
Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
Note: The channel-to-ambient thermal resistance, R
th(ch-a)
, and the drain power dissipation, P
D
, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2019-08-01
Rev.1.0
©2017-2019
Toshiba Electronic Devices & Storage Corporation