HT SiC Diodes
KT12DS10
High-Temperature, 1200V, 10Amp SiC JBS Diode
DS-00002-16 rev1B 2018-08-08
1 of 3
www.caly-technologies.com
© 2018 CALY Technologies. All rights reserved
PRELIMINARY
FEATURES
�� Essential no reverse or forward recovery
▲ Extremely fast switching not dependent on temperature
▲ Positive temperature coefficient for safe operation and ease of
paralleling
▲ Reverse voltage up to 1200V
▲ Operational from -60°C and 232°C
▲ Also available as bare die
DESCRIPTION
KT12DS10 is a 1200V, 10A high performance and high tem-
perature 4H-SiC junction barrier Schottky diode (JBS) able to
operate with a junction temperature up to 250°C.
This diode is suitable for high frequency and high power sys-
tems with minimum cooling requirements and/or high tempera-
ture environments. The KT12DS10 diode enable cost reduction.
APPLICATIONS
▲ Power conversion, industrial drives, switched-mode power
supplies, power factor correction, voltage blocking.
▲ High reliability applications, Automotive, Aeronautics & Aero-
space, Down-hole.
KEY PERFORMANCE
Value
1200 V
10 A
PACKAGING
QUICK ORDERING INFORMATION
Part Number
Package
Marking
KT12DS10B
Bare die
KT12DS10T57
TO-257
KT12DS10
Other packages and packaging configurations possible upon request. MOQ may apply.
ABSOLUTE MAXIMUM RATINGS
Unless otherwise stated, specification applies for T
C
=25°C.
Parameter
Symbol
Values
Unit
Note/Test Condition
Min
Typ
Max
DC Blocking Voltage
V
R
1200
V
Repetitive Peak Reverse Voltage
V
RRM
1200
V
T
J
=25°C
Maximum DC Forward Current
I
F
10
A
R
TH-JC
= 1.1°C/W
Non-Repetitive Forward Surge Current
I
FSM
80
T
C
=25°C, 8.3ms Half Sine Pulse
Non-Repetitive Avalanche Energy
E
AS
80
mJ
T
J
=25°C, V=100V
Power dissipation
P
TOT
135
W
T
C
=25°C
Maximum Junction Temperature
T
JMax
250
°C
Storage Temperature
T
STG
-60
232
°C
ELECTRICAL CHARACTERISTICS
Unless otherwise stated, specification applies for -60°C<T
J
<232°C.
Parameter
Symbol
Values
Unit
Note/Test Condition
Min
Typ
Max
Forward Voltage
V
F
1.7
2.1
3.3
4.1
V
I
F
=10A
T
J
=25°C
T
J
=175°C
T
J
=245°C
Reverse Current
I
R
40
70
250
200
900
3000
µA
V
R
=1200V
T
J
=25°C
T
J
=175°C
T
J
=245°C
Total Capacitance
C
500
40
pF
f=1MHz
V
R
=1V
V
R
=600V
THERMAL CHARACTERISTICS
Parameter
Symbol
Values
Unit
Note/Test Condition
Min
Typ
Max
Junction-case Thermal Resistance
R
TH-JC
4
°C/W
TO-257
KT12DS10
DS-00002-16 rev1B 2018-08-08
2 of 3
www.caly-technologies.com
© 2018 CALY Technologies. All rights reserved
PRELIMINARY
TYPICAL PERFORMANCE
Fig 1. Typical Forward I-V characteristics over Temperature.
Fig 2. Typical Reverse I-V characteristics over Temperature.
DETAILED ORDERING INFORMATION
K
T
12
DS
10
T57
Source
Temperature range:
Rated Voltage:
Device / Type
Rated Current:
Package:
K = CALY Technologies
T = -60°C to +232°C
12 = 1200V
DS = Diode / Schottky
10 = 10A
T57 = TO-257
Part Number
Temperature Range
Package
Pin Count
Marking
KT12DS10B
-60°C to 232°C
Bare die
KT12DS10T57
-60°C to 232°C
TO-257
3
KT12DS10
Other packages, packaging configurations and finishing materials possible upon request. MOQ may apply.
PACKAGE OUTLINES
TO257
Ref.
Dimensions
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.70
5.10
0.185
0.201
A1
2.70
3.10
0.106
0.122
A2
0.90
1.10
0.035
0.043
b
2.54 BSC
0.100 BSC
b1
4.88
5.28
0.192
0.208
c
0.80 BSC
0.032 BSC
c1
2.10 BSC
0.083 BSC
D
16.30
16.70
0.642
0.658
D1
13.30
13.70
0.524
0.540
D2
10.45
10.75
0.389
0.445
E
10.45
10.75
0.389
0.445
P1
3.50 BSC
0.138 BSC
r
2.10 BSC
0.020 BSC
Unique Lot Assembly Code
YY
Last two digits of assembly year (e.g. 18 = 2018)
WW
Assembly week (01 to 52)
M
Assembly location code
NN
Assembly lot code (01 to 99)