TPC8407
1
MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)
TPC8407
TPC8407
TPC8407
TPC8407
Start of commercial production
2011-03
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Motor Drivers
• CCFL Inverters
• Mobile Equipments
2.
2.
2.
2. Features
Features
Features
Features
(1) Small footprint due to a small and thin package
(2) High speed switching
(3) Low drain-source on-resistance
P-channel R
DS(ON)
= 18 mΩ (typ.) (V
GS
= -10 V),
N-channel R
DS(ON)
= 14 mΩ (typ.) (V
GS
= 10 V)
(4) Low leakage current
P-channel I
DSS
= -10 µA (V
DS
= -30 V),
N-channel I
DSS
= 10 µA (V
DS
= 30 V)
(5) Enhancement mode
P-channel V
th
= -0.8 to -2.0 V (V
DS
= -10 V, I
D
= -0.2 mA),
N-channel V
th
= 1.3 to 2.3 V (V
DS
= 10 V, I
D
= 0.1 mA)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
SOP-8
1: Source 1
2: Gate 1
3: Source 2
4: Gate 2
5, 6: Drain 2
7, 8: Drain 1
2014-01-07
Rev.2.0
TPC8407
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation (single operation)
Power dissipation (per device for dual
operation)
Power dissipation (single operation)
Power dissipation (per device for dual
operation)
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(t = 10 s)
(t = 10 s)
(t = 10 s)
(t = 10 s)
(Note 1)
(Note 1)
(Note 2), (Note 4)
(Note 2), (Note 5)
(Note 3), (Note 4)
(Note 3), (Note 5)
(Note 6)
P/N
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D(1)
P
D(2)
P
D(1)
P
D(2)
E
AS
I
AR
T
ch
T
stg
Rating
-30
30
±20
±20
-7.4
9
-29.6
36
1.5
1.5
1.1
1.1
0.75
0.75
0.45
0.45
35
52
-7.4
9
150
150
-55 to 150
-55 to 150
Unit
V
A
A
W
W
W
W
mJ
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2014-01-07
Rev.2.0