TPCP8405
1
MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)
TPCP8405
TPCP8405
TPCP8405
TPCP8405
Start of commercial production
2009-11
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Cell Phones
• Motor Drivers
2.
2.
2.
2. Features
Features
Features
Features
(1) Low drain-source on-resistance
P-channel R
DS(ON)
= 24 mΩ (typ.) (V
GS
= -10 V),
N-channel R
DS(ON)
= 20 mΩ (typ.) (V
GS
= 10 V)
(2) Low leakage current
P-channel I
DSS
= -10 µA (V
DS
= -30 V),
N-channel I
DSS
= 10 µA (V
DS
= 30 V)
(3) Enhancement mode
P-channel V
th
= -0.8 to -2.0 V (V
DS
= -10 V, I
D
= -0.1 mA),
N-channel V
th
= 1.3 to 2.3 V (V
DS
= 10 V, I
D
= 0.1 mA)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
PS-8
1: Source 1
2: Gate 1
3: Source 2
4: Gate 2
5, 6: Drain 2
7, 8: Drain 1
2015-10-21
Rev.3.0
©2015 Toshiba Corporation
TPCP8405
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation (single operation)
Power dissipation (per device for dual
operation)
Power dissipation (single operation)
Power dissipation (per device for dual
operation)
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(R
GS
= 20 kΩ)
(t = 5 s)
(t = 5 s)
(t = 5 s)
(t = 5 s)
(Note 1)
(Note 1)
(Note 2), (Note 4)
(Note 2), (Note 5)
(Note 3), (Note 4)
(Note 3), (Note 5)
(Note 6)
P/N
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D(1)
P
D(2)
P
D(1)
P
D(2)
E
AS
I
AR
T
ch
T
stg
Rating
-30
30
-30
30
±20
±20
-6
6.5
-24
26
1.48
1.48
1.23
1.23
0.58
0.58
0.36
0.36
9.36
10.9
-6
6.5
150
150
-55 to 150
-55 to 150
Unit
V
V
V
A
A
W
W
W
W
mJ
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2015-10-21
Rev.3.0
©2015 Toshiba Corporation