VS-40TPS12L-M3, VS-40TPS12AL-M3
www.vishay.com
Vishay Semiconductors
Revision: 31-Jul-2018
1
Document Number: 95993
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Thyristor High Voltage, Phase Control SCR, 40 A
FEATURES
•Low I
GT
parts available
• Designed and qualified according to
JEDEC
®
- JESD 47
• Flexible solution for reliable AC power
rectification
• Easy control peak current at charger power up to reduce
passive / electromechanical components
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery
charge
DESCRIPTION
The VS-40TPS12.. high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications.
AEC-Q101 qualified P/N available (VS-40TPS12LHM3,
VS-40TPS12ALHM3).
PRIMARY CHARACTERISTICS
I
T(AV)
35 A
V
DRM
/V
RRM
1200 V
V
TM
1.45 V
I
GT
150 mA
T
J
-40 °C to +125 °C
Package TO-247AD 3L
Circuit configuration Single SCR
(G) 3
2
(A)
1 (K)
TO-247AD 3L
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
Sinusoidal waveform 35
A
I
RMS
55
V
RRM
/V
DRM
1200 V
I
TSM
600 A
V
T
40 A, T
J
= 25 °C 1.45 V
dv/dt 1000 V/μs
di/dt 100 A/μs
T
J
-40 to +125 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
/V
DRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
/I
DRM
AT 125 °C
mA
VS-40TPS12AL-M3 1200 1300
10
VS-40TPS12L-M3 1200 1300
VS-40TPS12L-M3, VS-40TPS12AL-M3
www.vishay.com
Vishay Semiconductors
Revision: 31-Jul-2018
2
Document Number: 95993
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
T(AV)
T
C
= 79 °C, 180° conduction half sine wave 35
A
Maximum continuous RMS
on-state current as AC switch
I
T(RMS)
55
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
10 ms sine pulse, rated V
RRM
applied
Initial
T
J
= T
J
max.
500
10 ms sine pulse, no voltage reapplied 600
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 1250
A
2
s
10 ms sine pulse, no voltage reapplied 1760
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 17 600 A
2
s
Low level value of threshold voltage V
T(TO)1
T
J
= 125 °C
1.02
V
High level value of threshold voltage V
T(TO)2
1.23
Low level value of on-state slope resistance r
t1
9.74
m
High level value of on-state slope resistance r
t2
7.50
Maximum peak on-state voltage V
TM
110 A, T
J
= 25 °C 1.85 V
Maximum rate of rise of turned-on current di/dt T
J
= 25 °C 100 A/μs
Maximum holding current I
H
Anode supply = 6 V, resistive load, initial T
J
= 1 A, I
T
= 25 °C 300
mA
Maximum latching current I
L
Anode supply = 6 V, resistive load, T
J
= 25 °C 350
Maximum reverse and direct leakage current I
RRM/
I
DRM
T
J
= 25 °C
V
R
= rated V
RRM
/V
DRM
0.5
T
J
= 125 °C 10
Maximum rate of rise of off-state voltage
40TPS12A
dv/dt T
J
= T
J
maximum, linear to 80 % V
DRM
, R
g
- k = 100
500
V/μs
Maximum rate of rise of off-state voltage
40TPS12
1000
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak gate current I
GM
2.5 A
Maximum peak negative gate voltage -V
GM
10 V
Maximum required DC gate voltage to trigger V
GT
T
J
= -40 °C
Anode supply = 6 V
resistive load
2.0
VT
J
= 25 °C 1.7
T
J
= 125 °C 1.3
Maximum required DC gate current to trigger I
GT
T
J
= -40 °C
Anode supply = 6 V
resistive load
200
mA
T
J
= 25 °C 150
T
J
= 125 °C 80
T
J
= 25 °C, for 40TPS12A 40
Maximum DC gate voltage not to trigger
for 40TPS12
V
GD
T
J
= 125 °C, V
DRM
= rated value
0.25 V
Maximum DC gate current not to trigger
for 40TPS12
I
GD
6mA
Maximum DC gate voltage not to trigger
for 40TPS12A
V
GD
T
J
= 125 °C, V
DRM
= rated value
0.15 V
Maximum DC gate current not to trigger
for 40TPS12A
I
GD
1mA