Rev.1.0, 20
1
Descri
p
WMOS
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balance t
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Doc.W08
6
WML
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M
M07N65
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Unit
V
A
A
A
V
mJ
mJ
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W
W/°C
°C
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A
Unit
°C/W
°C/W
TO-251
T
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C
2
C
2
ET
Rev.1.0, 2015 www.way-on.com 2 / 10
WMx07N65C2
Electrical Characteristics T
c
= 25°C, unless otherwise noted
Parameter Symbol Test Condition Min. Typ. Max. Unit
Static characteristics
Drain-source breakdown voltage BV
DSS
V
GS
=0 V, I
D
=0.25 mA 650 - - V
Gate threshold voltage V
GS
(
th
)
V
DS
=V
GS
, I
D
=0.25mA 2.5 3.3 4.5 V
Drain cut-off current I
DSS
V
DS
=650 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
-
-
-
10
1
-
μA
Gate leakage current, forward I
GSSF
V
GS
=30 V, V
DS
=0 V - - 100 nA
Gate leakage current, reverse I
GSSR
V
GS
=-30 V, V
DS
=0 V - - -100 nA
Drain-source on-state resistance R
DS(on)
V
GS
=10 V, I
D
=2A
T
j
= 25°C
-
-
1.0
1.14
Ω
Dynamic characteristics
Input capacitance C
iss
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
- 270 -
pF
Output capacitance C
oss
- 200 -
Reverse transfer capacitance C
rss
- 2 -
Turn-on delay time t
d
(
on
)
V
DD
= 300V, I
D
= 2A
R
G
= 25Ω, V
GS
=10V
- 5 -
ns
Rise time t
r
- 16 -
Turn-off delay time t
d
(
off
)
- 24 -
Fall time t
f
- 12 -
Gate charge characteristics
Gate to source charge Q
g
s
V
DD
=480 V, I
D
=2A,
V
GS
=0 to 10 V
- 1.6 -
nC
Gate to drain charge Q
g
d
- 1.7 -
Gate charge total Q
g
- 5.8 -
Gate plateau voltage V
p
lateau
- 5 - V
Reverse diode characteristics
Diode forward voltage V
SD
V
GS
=0 V, I
F
=2A - - 1.2 V
Reverse recovery time t
r
r
V
R
=50 V, I
F
=2A,
dI
F
/dt=100 A/μs
- 163 - ns
Reverse recovery charge Q
r
r
- 0.84 - μC
Peak reverse recovery current I
rrm
- 10.3 - A
Notes:
1. Limited by T
j max
. Maximum duty cycle D=0.5.
2. Repetitive rating: pulse width limited by maximum junction temperature
3. I
AS
= 0.7A, V
DD
= 50V, R
G
= 25Ω, starting T
j
= 25°C