TPCP8407
1
MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS )
TPCP8407
TPCP8407
TPCP8407
TPCP8407
Start of commercial production
2013-05
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Motor Drivers
• Mobile Equipment
2.
2.
2.
2. Features
Features
Features
Features
(1) AEC-Q101 qualified
(2) Small, thin package
(3) Low gate charge
N-channel MOSFET: Q
SW
= 4.7 nC (typ.)
P-channel MOSFET: Q
SW
= 5.5 nC (typ.)
(4) Low drain-source on-resistance
N-channel MOSFET: R
DS(ON)
= 29.1 mΩ (typ.) (V
GS
= 10 V)
P-channel MOSFET: R
DS(ON)
= 43.7 mΩ (typ.) (V
GS
= -10V)
(5) Low leakage current
N-channel MOSFET: I
DSS
= 10 µA (max) (V
DS
= 40 V)
P-channel MOSFET: I
DSS
= -10 µA (max) (V
DS
= -40 V)
(6) Enhancement mode
N-channel MOSFET: V
th
= 2 to 3 V (V
DS
= 10 V, I
D
= 1 mA)
P-channel MOSFET: V
th
= -2 to -3 V (V
DS
= -10 V, I
D
= -1 mA)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
PS-8
1: Source (N-channel)
2: Gate (N-channel)
3: Source (P-channel)
4: Gate (P-channel)
5, 6: Drain (P-channel)
7, 8: Drain (N-channel)
2016-02-24
Rev.4.0
©2016 Toshiba Corporation
TPCP8407
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
4.1.
4.1.
4.1.
4.1. N-Channel MOSFET
N-Channel MOSFET
N-Channel MOSFET
N-Channel MOSFET
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation (single operation)
Power dissipation (per device for dual operation)
Power dissipation (single operation)
Power dissipation (per device for dual operation)
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(t = 5 s)
(t = 5 s)
(t = 5 s)
(t = 5 s)
(Note 1)
(Note 1)
(Note 2), (Note 4)
(Note 2), (Note 5)
(Note 3), (Note 4)
(Note 3), (Note 5)
(Note 6)
(Note 7)
(Note 7)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D(1)
P
D(2)
P
D(1)
P
D(2)
E
AS
I
AR
T
ch
T
stg
Rating
40
±20
5
20
1.77
1.47
0.69
0.43
33.2
5
175
-55 to 175
Unit
V
A
W
mJ
A
4.2.
4.2.
4.2.
4.2. P-Channel MOSFET
P-Channel MOSFET
P-Channel MOSFET
P-Channel MOSFET
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation (single operation)
Power dissipation (per device for dual operation)
Power dissipation (single operation)
Power dissipation (per device for dual operation)
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(t = 5 s)
(t = 5 s)
(t = 5 s)
(t = 5 s)
(Note 1)
(Note 1)
(Note 2), (Note 4)
(Note 2), (Note 5)
(Note 3), (Note 4)
(Note 3), (Note 5)
(Note 6)
(Note 7)
(Note 7)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D(1)
P
D(2)
P
D(1)
P
D(2)
E
AS
I
AR
T
ch
T
stg
Rating
-40
-20/+10
-4
-16
1.77
1.47
0.69
0.43
46.2
-4
175
-55 to 175
Unit
V
A
W
mJ
A
Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2016-02-24
Rev.4.0
©2016 Toshiba Corporation