High-reliability discrete products
and engineering services since 1977
MCR3818 SERIES
MCR3918 SERIES
SILICON CONTROLLED RECTIFIER
Rev. 20150306
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage
(1)
MCR3818, MCR3918-2
MCR3818, MCR3918-3
MCR3818, MCR3918-4
MCR3818, MCR3918-6
MCR3818, MCR3918-8
MCR3818, MCR3918-10
V
RRM
, V
DRM
50
100
200
400
600
800
Volts
Peak non-repetitive reverse blocking voltage
MCR3818, MCR3918-2
MCR3818, MCR3918-3
MCR3818, MCR3918-4
MCR3818, MCR3918-6
MCR3818, MCR3918-8
MCR3818, MCR3918-10
V
RSM
75
150
300
500
700
900
Volts
Forward on-state current RMS (all conduction angles)
I
T(RMS)
20
Amps
Average on-state current (T
C
= 67°C)
I
T(AV)
13
Amps
Circuit fusing considerations
(T
J
= -40 to +100°C, t ≤ 8.3ms)
I
2
t
235
A
2
s
Peak non-repetitive surge current
(1/2 cycle, 60Hz, T
J
= -40 to +100°C)
I
TSM
240
Amps
Peak gate power (maximum pulse width = 10µs)
P
GM
5
Watts
Average gate power
P
G(AV)
0.5
Watts
Peak forward gate current (maximum pulse width = 10µs)
I
GM
2
Amps
Peak gate voltage
V
GM
10
Volts
Operating junction temperature range
T
J
-40 to +125
°C
Storage temperature range
T
stg
-40 to +150
°C
Mounting torque
30
In. lb.
Note 1: V
DRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices ar e exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typical
Maximum
Unit
Thermal resistance, junction to case
DIGI PF2
TO-48
R
ӨJC
1
1.1
1.5
1.6
°C/W
High-reliability discrete products
and engineering services since 1977
MCR3818 SERIES
MCR3918 SERIES
SILICON CONTROLLED RECTIFIER
Rev. 20150306
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
Peak forward or reverse blocking current
(Rated V
DRM
or V
RRM
, gate open)
T
J
= 25°C
T
J
= 100°C
I
DRM,
I
RRM
-
-
10
5
µA
mA
Gate trigger current (continuous dc)
(V
D
= 7Vdc, R
L
= 100
Ω)
(V
D
= 7Vdc, R
L
= 100
Ω, TC =
-40°C)
I
GT
-
-
40
75
mA
Gate trigger voltage (continuous dc)
(V
D
= 7Vdc, gate open)
(V
D
= 7Vdc, R
L
= 100
Ω, T
C
= -40°C)
(V
D
= rated V
DRM
, R
L
= 100Ω, T
J
= 100°C)
V
GT
-
-
0.2
1.5
2.5
-
Volts
Peak on state voltage
(pulse width = 1ms max., duty cycle ≤ 1%)
(I
TM
= 20A)
(I
TM
= 41A)
V
TM
-
-
1.5
1.7
Volts
Holding current
(V
D
= 7Vdc, gate open)
(V
D
= 7Vdc, gate open, T
C
= -40°C)
I
H
-
-
50
90
mA
Typical
Gate controlled turn-on time (t
d
+ t
r
)
(I
TM
= 20A, I
GT
= 40mAdc, V
D
= rated V
DRM
)
t
gt
1
µs
Circuit commutate turn-off time
(I
TM
= 10A, I
R
– 10A)
(I
TM
= 10A, I
R
= 10A, T
J
= 100°C)
(V
D
= V
DRM
= rated voltage)
(dv/dt = 30V/µs)
t
q
20
30
µs
Critical rate of rise of off state voltage
(V
D
= rated V
DRM
, exponential waveform, gate open, T
J
= 100°C)
dv/dt
50
V/µs