SiC SCHOTTKY
KE17DJ10B
1700V, 10A SILICON CARBIDE SIC SCHOTTKY DIODE
DS-00070-18 rev1B 2018-08-08
1 of 3
www.caly-technologies.com
© 2018 CALY Technologies. All rights reserved
PRELIMINARY
FEATURES
▲ High Surge Current Capability SiC Schottky
▲ Maximum Operating Junction Temperature over 175°C
▲ Zero Reverse and Forward Recovery
▲ Fast and Temperature-independent Switching
▲ Positive Temperature Coefficient on V
F
ADVANTAGES AND BENEFITS
▲ Extremely Low Standby and Switching Power Losses
▲ Higher Efficiency than when using Si Diodes
▲ High Frequency Operation
▲ Very Low Heat Sink Requirements
▲ Paralleling of Devices Without Thermal Runaway
DESCRIPTION
KE17DJ10 is a family of high performance 1700V, 10A Silicon
Carbide (SiC) Schottky with enhanced surge current capabilities,
bale to operate at high frequencies and temperatures in excess
175°C.
SiC Schottky diodes offer zero reverse and forward recovery,
making them ideal for high frequency and high efficiency appli-
cations, with minimum heat sinking requirements.
APPLICATIONS
▲ Rectification, Voltage Blocking, Boost and Free Wheeling
▲ Switching Mode Power Supplies (SMPS)
▲ Power Factor Correction (PFC)
▲ Uninterruptible Power Supplies (UPS)
▲ Wind Turbine and Solar Inverters
▲ Motor Drives
▲ High Voltage Multipliers
▲ Induction Heating
▲ Snubbers
KEY PERFORMANCE
Value
1700V
10A
75nC
DIE OUTLINE
Top: anode
Bottom : cathode
QUICK ORDERING INFORMATION
Part Number
Package
Marking
KE17DJ10B
Bare die
KE17DJ10T47
TO-247-2L
KE17DJ10
Other packages and packaging configurations available and also possible upon re-
quest.
ABSOLUTE MAXIMUM RATINGS
Unless otherwise stated, specification applies for T
C
=25°C.
Parameter
Symbol
Values
Unit
Note/Test Condition
DC Blocking Voltage
V
R
1700
V
Repetitive Peak Reverse Voltage
V
RRM
1700
V
T
j
=25°C
Surge Peak Reverse Voltage
V
RSM
1700
V
Continuous Forward Current
I
F
10
A
T
C
=150°C, R
θJC
<1.2°C/W
Repetitive Peak Forward Surge Current
I
FRM
50
A
T
C
=25°C, t
p
=10ms half sinewave
Non-repetitive Peak Forward Surge Current
I
FSM
300
A
T
C
=25°C, t
p
=10ms, pulse
Operating Temperature Range
T
j
-55 to +175
°C
Storage Temperature Range
T
STG
-55 to +175
°C
TOP
BOTTOM
KE17DJ10B
DS-00070-18 rev1B 2018-08-08
2 of 3
www.caly-technologies.com
© 2018 CALY Technologies. All rights reserved
PRELIMINARY
ELECTRICAL CHARACTERISTICS
Unless otherwise stated, specification applies for -55°C<T
j
<175°C.
Parameter
Symbol
Values
Unit
Note/Test Condition
Min
Typ
Max
Forward Voltage
V
F
-
1.4
2.1
1.8
2.5
V
T
J
=25°C
T
J
=175°C
I
F
=10A
Reverse Current
I
R
-
30
50
100
200
µA
T
J
=25°C
T
J
=175°C
V
R
=1700V
Total Capacitive Charge
Q
C
-
77
-
nC
V
R
=1700V, I
F
=10A
di/dt=400A/µs
T
J
=25°C
Total Capacitance
C
-
1400
90
66
1600
120
80
pF
V
R
=1V
V
R
=560V
V
R
=1330V
f=1MHz, T
J
=25°C
TYPICAL PERFORMANCE
Fig 1. Typical Forward I-V characteristics over Temperature.
Fig 2. Typical Reverse I-V characteristics over Temperature.
Fig 3. Diode Capacitance C(pF) versus reverse voltage.