RU16P4M4
P-Channel Advanced Power MOSFET
Symbol Rating Unit
V
DSS
-16
V
GSS
±12
T
J
150 °C
T
STG
-55 to 150 °C
I
S
T
C
=25°C
-4 A
I
DP
①
T
C
=25°C
-16 A
T
C
=25°C
-4
T
C
=100°C
-2.5
T
A
=25°C
1.8
T
A
=70°C
1.4
T
C
=25°C
15.2
T
C
=100°C
6
T
A
=25°C
2.5
T
A
=70°C
1.6
Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2016
1 www.ruichips.com
Continuous Drain Current@T
A
(V
GS
=-4.5V)
③
Maximum Power Dissipation@T
C
Maximum Power Dissipation@T
A
③
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
300μs Pulse Drain Current Tested
Mounted on Large Heat Sink
I
D
②
A
P
D
W
Continuous Drain Current@T
C
(V
GS
=-4.5V)
Parameter
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
• -16V/-4A,
R
DS (ON)
=70mΩ(Typ.)@V
GS
=-4.5V
R
DS (ON)
=100mΩ(Typ.)@V
GS
=-2.5V
• Super High Dense Cell Design
• Fast Switching Speed
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
• Load Switch
• Battery Charge
• DC/DC Converters
Drain-Source Voltage
V
Gate-Source Voltage
Pin DescriptionFeatures
Applications
Absolute Maximum Ratings
SDFN2020
P-Channel MOSFET
S
G
D
D
D
D
PIN1
D
S
D
S
G
RU16P4M4
Symbol Rating Unit
R
JC
8.2 °C/W
R
JA
③
50 °C/W
E
AS
④
TBD mJ
Min. Typ. Max.
BV
DSS
Drain-Source Breakdown Voltage -16 V
-1
T
J
=125°C
-30
V
GS(th)
Gate Threshold Voltage -0.5 -1 V
I
GSS
Gate Leakage Current ±100 nA
70 80 mΩ
100 110 mΩ
V
SD
⑤
Diode Forward Voltage -1.2 V
t
rr
Reverse Recovery Time 7 ns
Q
rr
Reverse Recovery Charge 3 nC
R
G
Gate Resistance 0.8 Ω
C
iss
Input Capacitance 480
C
oss
Output Capacitance 78
C
rss
Reverse Transfer Capacitance 42
t
d(ON)
Turn-on Delay Time 6
t
r
Turn-on Rise Time 10
t
d(OFF)
Turn-off Delay Time 19
t
f
Turn-off Fall Time 8
Q
g
Total Gate Charge 7
Q
gs
Gate-Source Charge 1.1
Q
gd
Gate-Drain Charge 2.3
Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2016
2 www.ruichips.com
V
GS
=0V, I
DS
=-250µA
Electrical Characteristics (T
C
=25°C Unless Otherwise Noted)
R
DS(ON)
⑤
Drain-Source On-state Resistance
V
GS
=-4.5V, I
DS
=-4A
V
DS
=V
GS
, I
DS
=-250µA
Static Characteristics
Symbol Parameter Test Condition
RU16P4M4
Unit
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-16V, V
GS
=0V
µA
Parameter
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Avalanche Energy, Single Pulsed
Drain-Source Avalanche Ratings
V
GS
=0V,V
DS
=0V,F=1MHz
Dynamic Characteristics
⑥
V
GS
=±12V, V
DS
=0V
V
GS
=-2.5V, I
DS
=-2A
Diode Characteristics
I
SD
=-1A, V
GS
=0V
I
SD=-4A, dlSD/dt=100A/µs
V
DS
=-12V, V
GS
=-4.5V,
I
DS
=-4A
Gate Charge Characteristics
⑥
nC
ns
V
GS
=0V,
V
DS
=-8V,
Frequency=1.0MHz
pF
V
DD
=-8V,I
DS
=-4A,
V
GEN
=-4.5V,R
G
=6Ω