MMDT5401
Rev.B Apr.-2019 DATA SHEET
http://www.fsbrec.com 1 / 6
SOT-363 塑封封装双 PNP 半导体三极管。Double silicon PNP transistor in a SOT-363 Plastic
Package.
击穿电压高,可与 MMDT5551 互补。
High voltage, complementary Pair with MMDT5551.
用于普通高压放大。
General purpose high voltage amplifier.
PIN 1、4：Emitter PIN 2、5：Base PIN 3、6：Collector
放大及印章代码 / h
FE
Classifications & Marking
See
Marking Instructions.
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
MMDT5401
Rev.B Apr.-2019 DATA SHEET
http://www.fsbrec.com 2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
V
CBO
-180 V
Collector to Emitter Voltage
V
CEO
-160 V
Emitter to Base Voltage V
EBO
-6.0 V
Collector Current I
C
-600 mA
Base Current I
B
-300 mA
Collector Power Dissipation P
C
300 mW
Junction Temperature
T
j
150 ℃
Storage Temperature Range
T
stg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector Cut-Off Current I
CBO
V
CB
=-180V I
E
=0 -0.1 μA
Emitter Cut-Off Current I
EBO
V
EB
=-6.0V I
C
=0 -0.1 μA
DC Current Gain
h
FE(1)
V
CE
=-5.0V I
C
=-10mA 100 300
h
FE(2)
V
CE
=-5.0V I
C
=-50mA 20 70
h
FE(3)
V
CE
=-5.0V I
C
=-1.0mA 40 180
Collecto
r
-Emitter Saturation
V
oltage
V
CE(sat) (1)
I
C
=-10mA I
B
=-1.0mA -0.12 -0.4 V
V
CE(sat) (2)
I
C
=-50mA I
B
=-5.0mA -0.5 -0.8 V
Base-Emitter Saturation Voltage
V
BE(sat) (1)
I
C
=-10mA I
B
=-1.0mA -0.75 -1.0 V
V
BE(sat) (2)
I
C
=-50mA I
B
=-5.0mA -0.8 -1.0 V
Base-Emitter Voltage V
BE
V
CE
=-5.0V I
C
=-10mA -0.7 -0.75 V
Transition Frequency f
T
V
CE
=-10V I
C
=-10mA 50 80 MHz
Collector Output Capacitance C
ob
V
CB
=-10V I
E
=0
f=10MHz
2.5 5.0 pF
Turn-on Time t
on
I
C
=-100mA
-I
B1
=I
B2
=-10mA
0.1 μs
Storage Time t
off
0.2 μs
Fall Time t
stg
0.1 μs
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)