GA01PNS150-220
Apr 2015 http://www.genesicsemi.com/commercial-sic/sic-ultra-high-voltage-pin-thyristors/ Page 1 of 4
Silicon Carbide
PiN Diode
Features
Package
RoHS Compliant
15 kV blocking
175 °C operating temperature
Fast turn off characteristics
Soft reverse recovery characteristics
Ultra-Fast high temperature switching
Advantages
Applications
Highest voltage rectifier commercially available
Reduced stacking
Reduced system complexity/Increased reliability
Voltage Multiplier
Ignition/Trigger Circuits
Oil/Downhole
Lighting
Defense
Maximum Ratings at T
j
= 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
Repetitive peak reverse voltage
V
RRM
15
kV
Continuous forward current
I
F
1
A
RMS forward current
I
F(RMS)
0.5
A
Operating and storage temperature
T
j
, T
stg
-55 to 175
°C
Electrical Characteristics at T
j
= 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Diode forward voltage
V
F
I
F
= 1 A, T
j
= 25 °C
6.4
V
I
F
= 1 A, T
j
= 175 °C
4.7
Reverse current
I
R
V
R
= 8 kV, T
j
= 25 °C
1
20
µA
V
R
= 8 kV, T
j
= 175 °C
100
Total reverse recovery charge
Q
rr
I
F
≤ I
F,MAX
dI
F
/dt = 70 A/μs
T
j
= 175 °C
V
R
= 1000 V
I
F
= 1.5 A
558
nC
Switching time
t
s
V
R
= 1000 V
I
F
= 1.5 A
< 236
ns
Total capacitance
C
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
22
pF
V
R
= 400 V, f = 1 MHz, T
j
= 25 °C
4
V
R
= 1000 V, f = 1 MHz, T
j
= 25 °C
3
Total capacitive charge
Q
C
V
R
= 1000 V, f = 1 MHz, T
j
= 25 °C
4.5
nC
2
1
V
RRM
=
15.0 kV
I
F (Tc=25°C)
=
1 A
PIN 1
PIN 2
GA01PNS150-220
Apr 2015 http://www.genesicsemi.com/commercial-sic/sic-ultra-high-voltage-pin-thyristors/ Page 2 of 4
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics at 25°C
Figure 3: Typical Junction Capacitance vs Reverse Voltage
Characteristics
Figure 4: Typical Turn Off Characteristics at I
k
= 0.5 A and
V
R
= 1000 V
Figure 5: Typical Turn Off Characteristics at T
j
= 175°C and
V
R
= 1000 V
Figure 6: Reverse Recovery Charge vs Cathode Current