RU3075R
N-Channel Advanced Power MOSFET
Symbol Rating Unit
V
DSS
30
V
GSS
±20
T
J
175 °C
T
STG
-55 to 175 °C
I
S
T
C
=25°C
75 A
I
DP
①
T
C
=25°C
300 A
T
C
=25°C
75
T
C
=100°C
52
T
C
=25°C
55
T
C
=100°C
28
R
JC
2.7 °C/W
R
JA
62.5 °C/W
E
AS
③
81 mJ
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2017
1 www.ruichips.com
Pin DescriptionFeatures
Absolute Maximum Ratings
TO220
N-Channel MOSFET
• 30V/75A,
R
DS (ON)
=5mΩ(Typ.)@V
GS
=10V
R
DS (ON)
=6.5mΩ(Typ.)@V
GS
=4.5V
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC-DC Converters
• Power Supply
Parameter
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
Drain-Source Voltage
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
Avalanche Energy, Single Pulsed
Diode Continuous Forward Current
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=10V)
Maximum Power Dissipation
Mounted on Large Heat Sink
I
D
②
A
P
D
W
Thermal Resistance-Junction to Ambient
G
D
S
D
S
G
RU3075R
Min. Typ. Max.
BV
DSS
Drain-Source Breakdown Voltage 30 V
1
T
J
=125°C
30
V
GS(th)
Gate Threshold Voltage 1 2.5 V
I
GSS
Gate Leakage Current ±100 nA
6.5 8 mΩ
56mΩ
V
SD
④
Diode Forward Voltage 1.2 V
t
rr
Reverse Recovery Time 27 ns
Q
rr
Reverse Recovery Charge 16 nC
R
G
Gate Resistance 1.5 Ω
C
iss
Input Capacitance 2450
C
oss
Output Capacitance 490
C
rss
Reverse Transfer Capacitance 240
t
d(ON)
Turn-on Delay Time 15
t
r
Turn-on Rise Time 68
t
d(OFF)
Turn-off Delay Time 36
t
f
Turn-off Fall Time 29
Q
g
Total Gate Charge 42
Q
gs
Gate-Source Charge 10
Q
gd
Gate-Drain Charge 13
Notes:
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2017
2 www.ruichips.com
Electrical Characteristics (T
C
=25°C Unless Otherwise Noted)
V
DD
=15V,I
DS
=75A,
V
GEN
=10V,R
G
=4.7Ω
I
SD
=75A, V
GS
=0V
I
SD=75A, dlSD/dt=100A/µs
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
pF
Dynamic Characteristics
⑤
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=60A
Diode Characteristics
V
DS
=V
GS
, I
DS
=250µA
Static Characteristics
Symbol Parameter Test Condition
V
DS
=24V, V
GS
=10V,
I
DS
=75A
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature.
③Limited by TJmax, IAS =18A, VDD = 24V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Gate Charge Characteristics
⑤
nC
ns
V
GS
=4.5V, I
DS
=45A
Drain-Source On-state Resistance
R
DS(ON)
④
RU3075R
Unit
V
GS
=0V, I
DS
=250µA
I
DSS
Zero Gate Voltage Drain Current
V
DS
=30V, V
GS
=0V
µA