JMnic Product Specification
Silicon PNP Power Transistors 2SA1008
DESCRIPTION
・With TO-220 package
・Complement to type 2SC2331
・Low collector saturation voltage
・Fast switching speed
APPLICATIONS
・Switching regulators
・DC/DC converters
・High frequency power amplifiers
PINNING
PIN DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3 Base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
Collector-base voltage Open emitter -100 V
V
CEO
Collector-emitter voltage Open base -100 V
V
EBO
Emitter-base voltage Open collector -7 V
I
C
Collector current -2.0 A
I
CM
Collector current-Peak -4.0 A
I
B
Base current -1.0 A
T
a
=25℃ 1.5
P
T
Total power dissipation
T
C
=25℃ 15
W
T
j
Junction temperature 150 ℃
T
stg
Storage temperature -55~150 ℃
Fig.1 simplified outline (TO-220) and symbol
JMnic Product Specification
2
Silicon PNP Power Transistors 2SA1008
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage I
C
=-1.0A ,I
B
=-0.1A,L=1mH -100 V
V
CEsat
Collector-emitter saturation voltage I
C
=-1A; I
B
=-0.1A -0.6 V
V
BEsat
Base-emitter saturation voltage I
C
=-1A ;I
B
=-0.1A -1.5 V
I
CBO
Collector cut-off current V
CB
=-100V; I
E
=0 -10
μA
I
EBO
Emitter cut-off current V
EB
=-5V; I
C
=0 -10
μA
h
FE-1
DC current gain I
C
=-0.1A ; V
CE
=-5V 40
h
FE-2
DC current gain I
C
=-1A ; V
CE
=-5V 40 200
Switching times resistive load
t
on
Turn-on time 0.5
μs
t
s
Storage time 1.5
μs
t
f
Fall time
I
C
=-1.0A I
B1
=- I
B2
=-0.1A
R
L
=50Ω;V
CC
≈50V
0.5
μs
h
FE-2
Classifications
M L K
40-80 60-120 100-200